Electronic switching component NIKO-SEM PA102FMG P Channel Enhancement Mode MOSFET for power management
Key Attributes
Model Number:
PA102FMG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
118mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Input Capacitance(Ciss):
430pF
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
PA102FMG
Package:
SOT-23
Product Description
Product Overview
The PA102FMG is a P-Channel Enhancement Mode MOSFET designed for various applications. It offers key electrical characteristics and thermal properties suitable for power management and switching tasks.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| STATIC LIMITS | V(BR)DSS | VGS = -2.5V, ID = -1A | -20 | V | ||
| IDSS | VDS = -16V, VGS = 0V | -0.45 | -0.8 | uA | ||
| IGSS | VDS = -16V, VGS = 0V , TJ = 125 C | -1 | -10 | uA | ||
| ID(ON) | VGS = -4.5V, ID = -2A | -150 | 215 | mA | ||
| VGS(th) | VDS = VGS, ID = -250mA | -1 | -1.2 | -1.6 | V | |
| ON-STATE CHARACTERISTICS | RDS(ON) | VGS = -4.5V, ID = -2A | 98 | 118 | m | |
| RDS(ON) | VGS = -10V, ID = -2A | 72 | 85 | m | ||
| gfs | VDS = -5V, ID = -2A | 16 | S | |||
| DYNAMIC CHARACTERISTICS | Ciss | VGS = 0V, VDS = -6V, f = 1MHz | 430 | pF | ||
| Coss | VGS = 0V, VDS = -6V, f = 1MHz | 235 | pF | |||
| Crss | VGS = 0V, VDS = -6V, f = 1MHz | 95 | pF | |||
| SWITCHING CHARACTERISTICS | td(on) | VDD = -10V ID @ -1A, VGS = -4.5V, RG = 6 | 3.2 | nS | ||
| tr | VDD = -10V ID @ -1A, VGS = -4.5V, RG = 6 | 11 | nS | |||
| td(off) | VDD = -10V ID @ -1A, VGS = -4.5V, RG = 6 | 22 | nS | |||
| tf | VDD = -10V ID @ -1A, VGS = -4.5V, RG = 6 | 32 | nS | |||
| CHARGE CHARACTERISTICS | Qg | VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -2A | 55 | nC | ||
| Qgs | VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -2A | 38 | nC | |||
| Qgd | VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -2A | 32 | nC | |||
| SOURCE-DRAIN DIODE | VSD | IF = -2A, VGS = 0V | -1.2 | V | ||
| IS | -20 | A | ||||
| ABSOLUTE MAXIMUM RATINGS | VDS | -10 | V | |||
| ID | TA = 25 C | -2.1 | A | |||
| IDM | Pulsed Drain Current | -12 | A | |||
| PD | Power Dissipation | TA = 25 C | 0.88 | 1.38 | W | |
| RqJA | Junction-to-Ambient | 90 | C / W | |||
| TJ, TSTG | Operating Junction & Storage Temperature Range | -55 | 150 | C |
2410010302_NIKO-SEM-PA102FMG_C133607.pdf
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