Parker AO3407 P Channel Enhancement Mode Power MOSFET with Ultra Low On Resistance in SOT 23 Package
Key Attributes
Model Number:
AO3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-50℃~+150℃
RDS(on):
55mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 P-Channel
Input Capacitance(Ciss):
570pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11.5nC@10V
Mfr. Part #:
AO3407
Package:
SOT-23
Product Description
Product Overview
The AO3407 is a P-Channel Enhancement Mode Power MOSFET utilizing an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package, making it suitable for various electronic applications. This RoHS compliant and halogen-free component offers high performance and reliability.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Package Type: SOT-23 Small Outline Plastic Package
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Packing: Tape/Reel, 7" reel, 3000 units per reel (EIA-481-1 standard)
- Marking: 3407
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=-250A | -30 | -- | -- | V |
| VGS | Gate-Source Voltage | 20 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | to | 155 | C | |
| IS | Diode Continuous Forward Current | Tc=25C, Mounted on Large Heat Sink | -4.1 | A | ||
| IDM | Pulse Drain Current | Tc=25C | -15 | A | ||
| ID | Tested Continuous Drain Current | Tc=25C, GS=10V | -4.1 | A | ||
| PD | Maximum Power Dissipation | Tc=25C | 1.5 | W | ||
| RJA | Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | 82 | C/W | ||
| Electrical Characteristics | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=-30VVGS=0V | -- | -1 | uA | |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=-250A | -1.0 | -1.5 | -2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=-10V ID=-4.1A | -- | 40 | 60 | m |
| VGS=-4.5VID=-3.5A | -- | 55 | 90 | m | ||
| CISS | Input Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 570 | -- | pF |
| COSS | Output Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 80 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=-15VVGS=0V f=1MHz | -- | 70 | -- | pF |
| Qg | Total Gate Charge | VDS=-15VID=-4.2A VGS=-10V | -- | 11.5 | -- | nC |
| Qgs | Gate Source Charge | VDS=-15VID=-4.2A VGS=-10V | -- | 2.3 | -- | nC |
| Qgd | Gate Drain Charge | VDS=-15VID=-4.2A VGS=-10V | -- | 2.1 | -- | nC |
| td(on) | Turn-on Delay Time | VDS=-15VID=-4.2A VGS=-10V, RG=3 | -- | 3.8 | -- | nS |
| tr | Turn-on Rise Time | VDS=-15VID=-4.2A VGS=-10V, RG=3 | -- | 17.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDS=-15VID=-4.2A VGS=-10V, RG=3 | -- | 18 | -- | nS |
| tf | Turn-Off Fall Time | VDS=-15VID=-4.2A VGS=-10V, RG=3 | -- | 21.8 | -- | nS |
| VSD | Source- Drain Diode Forward on voltage | Tj=25Is=-4A | -- | -- | -1.2 | V |
2410122024_PAKER-AO3407_C5278900.pdf
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