Robust P Channel Enhancement Mode MOSFET NIKO SEM P9006EVG for power switching and control solutions
Key Attributes
Model Number:
P9006EVG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 P-Channel
Input Capacitance(Ciss):
760pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
P9006EVG
Package:
SOP-8
Product Description
Product Overview
The P9006EVG is a P-Channel Enhancement Mode MOSFET designed for various electronic applications. It offers key performance characteristics such as low on-state resistance and robust absolute maximum ratings, making it suitable for power switching and control circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -60 | V | ||
| Continuous Drain Current | ID | TA = 25 C | -4.5 | A | ||
| On-State Drain Current | ID(ON) | VDS = VGS, ID = -250A | -20 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -4.5A | 90 | m | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | TA = 25 C | -60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA = 70 C | -3.5 | A | ||
| Pulsed Drain Current | IDM | -4.5 | A | |||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RJA | TA = 25 C | 50 | C / W | ||
| Operating Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Power Dissipation | PD | TA = 25 C | 1.6 | 2.5 | W | |
| ELECTRICAL CHARACTERISTICS | ||||||
| Gate-Body Leakage | IGSS | VDS = -5V, VGS = 20V | 250 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -60V, VGS = 0V | -1.0 | -1.5 | A | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -48V, VGS = 0V , TJ = 125 C | -10 | -20 | A | |
| Gate Threshold Voltage | VGS(th) | VDS = 0V, VGS = 0V, ID = -250A | -1.0 | -1.3 | -2.6 | V |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -60 | V | ||
| On-State Drain Current | ID(ON) | VDS = -36V, VGS = -10V | -4.5 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -4.5A | 90 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -3.5A | 150 | m | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = -30V, f = 1MHz | 760 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = -30V, f = 1MHz | 190 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -30V, f = 1MHz | 40 | pF | ||
| Forward Transconductance | gfs | VDS = -10V, ID = -4.5A | 15.0 | S | ||
| Total Gate Charge | Qg | VDS = 0.5V(BR)DSS, ID = -4.5A, VGS = -10V | 19 | 34 | nC | |
| Gate-Source Charge | Qgs | VDS = 0.5V(BR)DSS, ID = -4.5A, VGS = -10V | 7 | 14 | nC | |
| Gate-Drain Charge | Qgd | VDS = 0.5V(BR)DSS, ID = -4.5A, VGS = -10V | 10 | 20 | nC | |
| Turn-On Delay Time | td(on) | VDS = -20V, ID -1A, VGS = -10V, RGS= 6 | 19 | 34 | nS | |
| Rise Time | tr | VDS = -20V, ID -1A, VGS = -10V, RGS= 6 | 12 | 22 | nS | |
| Turn Off Delay Time | td(off) | VDS = -20V, ID -1A, VGS = -10V, RGS= 6 | 15.5 | nS | ||
| Fall Time | tf | VDS = -20V, ID -1A, VGS = -10V, RGS= 6 | 7.9 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Forward Voltage | VSD | IF = -3.5A, VGS = 0V | -1.3 | -2.6 | V | |
| Continuous Current | IS | -4.5 | A | |||
| Pulsed Current | ISM | -15.5 | A | |||
| Reverse Recovery Time | trr | IF = -3.5A, dlF/dt = 100A / S | nS | |||
| Reverse Recovery Charge | Qrr | IF = -3.5A, dlF/dt = 100A / S | nC | |||
2411220152_NIKO-SEM-P9006EVG_C133606.pdf
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