Silicon planar transistor PANJIT MMBTA44 R1 00001 with 400V collector emitter voltage and 300mA current
Key Attributes
Model Number:
MMBTA44_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA44_R1_00001
Package:
SOT-23
Product Description
MMBTA44 NPN High Voltage Transistor
The MMBTA44 is a silicon, planar design NPN transistor designed for high voltage applications. It offers a collector-emitter voltage of 400V and a continuous collector current of 300mA, with a power dissipation of 225mW. This component is lead-free and compliant with EU RoHS 2011/65/EU, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Material: Silicon, Planar Design
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Color: Green (molding compound)
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition |
| Collector-Emitter Voltage | V CEO | 400 | V | |
| Collector-Base Voltage | V CBO | 500 | V | |
| Emitter-Base Voltage | V EBO | 6.0 | V | |
| Collector Current (Continuous) | I C | 300 | mA | |
| Max Power Dissipation (Note 1) | P TOT | 225 | mW | Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. |
| Thermal Resistance, Junction to Ambient | RJA | 556 | OC/W | |
| Junction Temperature | TJ | -55 to 150 | OC | |
| Storage Temperature | TSTG | -55 to 150 | OC | |
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 400 | V | I C=1mA, I B=0 |
| Collector-Base Breakdown Voltage | V (BR)CBO | 500 | V | I C=100A,I E=0 |
| Emitter-Base Breakdown Voltage | V (BR)EBO | 6 | V | I E=10A,I C=0 |
| Collector Cut-off Current | I CBO | 0.1 | A | V CB=400V, I E=0A |
| Emitter Cut-off Current | I EBO | 0.1 | A | V EB=6V, I C=0 |
| DC Current Gain | hFE | 40-200 | V CE=10V,I C=1mA to 100mA | |
| Collector-Emitter Saturation Voltage | V CE(SAT) | 0.4-0.75 | V | I C=1mA, I B=0.1mA to I C=50mA, I B=5mA |
| Base-Emitter Saturation Voltage | V BE(SAT) | 0.75 | V | I C=10mA,I B=1mA |
| Collector Gain-Bandwidth Product | F T | 50 | MHZ | I C=10mA,V CE=20V , f=100MHZ |
2410121517_PANJIT-MMBTA44-R1-00001_C6093930.pdf
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