Integrated bias resistor digital transistor onsemi DTA143EM3T5G ideal for and compact electronic device designs

Key Attributes
Model Number: DTA143EM3T5G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA143EM3T5G
Package:
SOT-723
Product Description

Product Overview

This series of digital transistors (BRT) integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This design eliminates the need for external bias resistors, simplifying circuit design, reducing board space, and lowering component count. These devices are ideal for applications requiring a single device to replace a discrete transistor and its associated biasing components.

Product Attributes

  • Brand: onsemi (Semiconductor Components Industries, LLC)
  • Certifications: AEC-Q101 Qualified and PPAP Capable (S and NSV Prefix for Automotive and Other Applications)
  • Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

Device Part NumberMarkingPackageShippingCollector-Base Voltage (VCBO)Collector-Emitter Voltage (VCEO)Collector Current (IC)Input Forward Voltage (VIN(fwd))Input Reverse Voltage (VIN(rev))Collector-Base Cutoff Current (ICBO)Collector-Emitter Cutoff Current (ICEO)Emitter-Base Cutoff Current (IEBO)Collector-Base Breakdown Voltage (V(BR)CBO)Collector-Emitter Breakdown Voltage (V(BR)CEO)DC Current Gain (hFE)Collector-Emitter Saturation Voltage (VCE(sat))Input Voltage (off) (Vi(off))Input Voltage (on) (Vi(on))Output Voltage (on) (VOL)Output Voltage (off) (VOH)Input Resistor (R1)Resistor Ratio (R1/R2)
MUN2132T1G, NSVMUN2132T1G*6JSC593000 / Tape & Reel50 Vdc50 Vdc100 mAdc30 Vdc10 Vdc100 nAdc500 nAdc1.5 mAdc50 Vdc50 Vdc15 (min)0.25 Vdc (max)1.2 Vdc (typ)3.0 Vdc (min)0.2 Vdc (max)4.9 Vdc (min)3.3 - 6.1 kΩ0.8 - 1.2
MMUN2132LT1G, NSVMMUN2132LT1G*A6JSOT233000 / Tape & Reel50 Vdc50 Vdc100 mAdc30 Vdc10 Vdc100 nAdc500 nAdc1.5 mAdc50 Vdc50 Vdc15 (min)0.25 Vdc (max)1.2 Vdc (typ)3.0 Vdc (min)0.2 Vdc (max)4.9 Vdc (min)3.3 - 6.1 kΩ0.8 - 1.2
MUN5132T1G, NSVMUN5132T1G*6JSC70/SOT3233000 / Tape & Reel50 Vdc50 Vdc100 mAdc30 Vdc10 Vdc100 nAdc500 nAdc1.5 mAdc50 Vdc50 Vdc15 (min)0.25 Vdc (max)1.2 Vdc (typ)3.0 Vdc (min)0.2 Vdc (max)4.9 Vdc (min)3.3 - 6.1 kΩ0.8 - 1.2
DTA143EET1G43SC753000 / Tape & Reel50 Vdc50 Vdc100 mAdc30 Vdc10 Vdc100 nAdc500 nAdc1.5 mAdc50 Vdc50 Vdc15 (min)0.25 Vdc (max)1.2 Vdc (typ)3.0 Vdc (min)0.2 Vdc (max)4.9 Vdc (min)3.3 - 6.1 kΩ0.8 - 1.2
DTA143EM3T5G, NSVDTA143EM3T5G*6JSOT7238000 / Tape & Reel50 Vdc50 Vdc100 mAdc30 Vdc10 Vdc100 nAdc500 nAdc1.5 mAdc50 Vdc50 Vdc15 (min)0.25 Vdc (max)1.2 Vdc (typ)3.0 Vdc (min)0.2 Vdc (max)4.9 Vdc (min)3.3 - 6.1 kΩ0.8 - 1.2
NSBA143EF3T5GA (90°)*SOT11238000 / Tape & Reel50 Vdc50 Vdc100 mAdc30 Vdc10 Vdc100 nAdc500 nAdc1.5 mAdc50 Vdc50 Vdc15 (min)0.25 Vdc (max)1.2 Vdc (typ)3.0 Vdc (min)0.2 Vdc (max)4.9 Vdc (min)3.3 - 6.1 kΩ0.8 - 1.2

2410010231_onsemi-DTA143EM3T5G_C896195.pdf

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