Integrated bias resistor digital transistor onsemi DTA143EM3T5G ideal for and compact electronic device designs
Product Overview
This series of digital transistors (BRT) integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This design eliminates the need for external bias resistors, simplifying circuit design, reducing board space, and lowering component count. These devices are ideal for applications requiring a single device to replace a discrete transistor and its associated biasing components.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AEC-Q101 Qualified and PPAP Capable (S and NSV Prefix for Automotive and Other Applications)
- Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Device Part Number | Marking | Package | Shipping | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | Collector-Base Cutoff Current (ICBO) | Collector-Emitter Cutoff Current (ICEO) | Emitter-Base Cutoff Current (IEBO) | Collector-Base Breakdown Voltage (V(BR)CBO) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Input Voltage (off) (Vi(off)) | Input Voltage (on) (Vi(on)) | Output Voltage (on) (VOL) | Output Voltage (off) (VOH) | Input Resistor (R1) | Resistor Ratio (R1/R2) |
| MUN2132T1G, NSVMUN2132T1G* | 6J | SC59 | 3000 / Tape & Reel | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 100 nAdc | 500 nAdc | 1.5 mAdc | 50 Vdc | 50 Vdc | 15 (min) | 0.25 Vdc (max) | 1.2 Vdc (typ) | 3.0 Vdc (min) | 0.2 Vdc (max) | 4.9 Vdc (min) | 3.3 - 6.1 kΩ | 0.8 - 1.2 |
| MMUN2132LT1G, NSVMMUN2132LT1G* | A6J | SOT23 | 3000 / Tape & Reel | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 100 nAdc | 500 nAdc | 1.5 mAdc | 50 Vdc | 50 Vdc | 15 (min) | 0.25 Vdc (max) | 1.2 Vdc (typ) | 3.0 Vdc (min) | 0.2 Vdc (max) | 4.9 Vdc (min) | 3.3 - 6.1 kΩ | 0.8 - 1.2 |
| MUN5132T1G, NSVMUN5132T1G* | 6J | SC70/SOT323 | 3000 / Tape & Reel | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 100 nAdc | 500 nAdc | 1.5 mAdc | 50 Vdc | 50 Vdc | 15 (min) | 0.25 Vdc (max) | 1.2 Vdc (typ) | 3.0 Vdc (min) | 0.2 Vdc (max) | 4.9 Vdc (min) | 3.3 - 6.1 kΩ | 0.8 - 1.2 |
| DTA143EET1G | 43 | SC75 | 3000 / Tape & Reel | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 100 nAdc | 500 nAdc | 1.5 mAdc | 50 Vdc | 50 Vdc | 15 (min) | 0.25 Vdc (max) | 1.2 Vdc (typ) | 3.0 Vdc (min) | 0.2 Vdc (max) | 4.9 Vdc (min) | 3.3 - 6.1 kΩ | 0.8 - 1.2 |
| DTA143EM3T5G, NSVDTA143EM3T5G* | 6J | SOT723 | 8000 / Tape & Reel | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 100 nAdc | 500 nAdc | 1.5 mAdc | 50 Vdc | 50 Vdc | 15 (min) | 0.25 Vdc (max) | 1.2 Vdc (typ) | 3.0 Vdc (min) | 0.2 Vdc (max) | 4.9 Vdc (min) | 3.3 - 6.1 kΩ | 0.8 - 1.2 |
| NSBA143EF3T5G | A (90°)* | SOT1123 | 8000 / Tape & Reel | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 100 nAdc | 500 nAdc | 1.5 mAdc | 50 Vdc | 50 Vdc | 15 (min) | 0.25 Vdc (max) | 1.2 Vdc (typ) | 3.0 Vdc (min) | 0.2 Vdc (max) | 4.9 Vdc (min) | 3.3 - 6.1 kΩ | 0.8 - 1.2 |
2410010231_onsemi-DTA143EM3T5G_C896195.pdf
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