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quality Collector emitter voltage 40 volt PANJIT MMBT2222A NPN epitaxial silicon planar transistor for switching factory
quality Collector emitter voltage 40 volt PANJIT MMBT2222A NPN epitaxial silicon planar transistor for switching factory

Collector emitter voltage 40 volt PANJIT MMBT2222A NPN epitaxial silicon planar transistor for switching

Key Attributes
Model Number: MMBT2222A
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
225mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description

MMBT2222A NPN General Purpose Switching Transistor

The MMBT2222A is an NPN epitaxial silicon planar design transistor suitable for general purpose switching applications. It offers a collector-emitter voltage of 40V and a continuous collector current of 600mA. This lead-free component complies with EU RoHS 2.0 and features a green molding compound. It is supplied in a SOT-23 package.

Product Attributes

  • Brand: Panjit International Inc. (implied by disclaimer and part numbering)
  • Material: NPN epitaxial silicon, planar design
  • Color: Green (molding compound)
  • Certifications: EU RoHS 2.0 compliant, IEC 61249 standard (Green molding compound)
  • Package: SOT-23, Plastic
  • Terminals: Solderable per MIL-STD-750, Method 2026

Technical Specifications

Parameter Symbol Value Units Conditions
Collector-Emitter Voltage VCEO 40 V
Collector-Base Voltage VCBO 75 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 600 mA
Max. Power Dissipation (Note 1) PTOT 225 mW Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.
Thermal Resistance, Junction to Ambient RJA 556 C/W
Junction Temperature TJ -55 to +150 C
Storage Temperature TSTG -55 to +150 C
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 0.1mA, IB = 0
Collector-Base Breakdown Voltage V(BR)CBO 75 V IE = 0.1mA, IC = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IC = 0.1mA, IE = 0
Collector Cut-off Current ICEX 0.3 A VCE = 30V, VBE = 0.3V
Collector Cut-off Current ICBO 10 nA VCE = 60V, TJ = 150C
Emitter Cut-off Current IEBO 10 nA VEB = 6V, IC = 0
DC Current Gain hFE 100 to 300 IC = 150mA, VCE = 10V
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC = 500mA, IB = 50mA (Note 2)
Collector-Emitter Saturation Voltage VCE(SAT) 1.0 V IC = 150mA, IB = 15mA (Note 2)
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 500mA, IB = 50mA (Note 2)
Base-Emitter Saturation Voltage VBE(SAT) 0.6 V IC = 150mA, IB = 15mA (Note 2)
Collector-Base Capacitance Cobo 8 pF VCB = 10V, f = 1MHz, IE = 0
Base-Emitter Capacitance Cebo 25 pF VBE = 0.5V, f = 1MHz, IC = 0
Turn-On Time ts 25 ns VCC = 3V, IB1 = 15mA, IC = 150mA (Note 2)
Storage Time ts 25 ns VCC = 3V, IB1 = 15mA, IC = 150mA (Note 2)
Fall Time tf 60 ns VCC = 3V, IB1 = 15mA, IC = 150mA (Note 2)

Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.

Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.


2410010102_PANJIT-MMBT2222A_C2992465.pdf

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