86--136 6733 2386
quality PANJIT MMBT5551-AU R1 000A2 NPN Transistor 160V Collector Emitter Voltage and 600mA Collector Current factory
quality PANJIT MMBT5551-AU R1 000A2 NPN Transistor 160V Collector Emitter Voltage and 600mA Collector Current factory

PANJIT MMBT5551-AU R1 000A2 NPN Transistor 160V Collector Emitter Voltage and 600mA Collector Current

Key Attributes
Model Number: MMBT5551-AU_R1_000A2
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5551-AU_R1_000A2
Package:
SOT-23
Product Description

Product Overview

The MMBT5551-AU is an NPN Silicon planar design high voltage transistor. It features a collector-emitter voltage of 160V and a continuous collector current of 600mA. This AEC-Q101 qualified component is lead-free in compliance with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 standard. It is housed in a SOT-23 plastic package.

Product Attributes

  • Brand: Panjit International Inc.
  • Product Name: MMBT5551-AU
  • Type: NPN High Voltage Transistor
  • Material: Silicon, Planar Design
  • Color: Green (molding compound)
  • Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant
  • Package: SOT-23, Plastic
  • Origin: Not specified

Technical Specifications

ParameterSymbolValueUnitsTest Condition
Collector-Emitter VoltageVCEO160V
Collector-Base VoltageVCBO180V
Emitter-Base VoltageVEBO6V
Collector Current ContinuousIC600mA
Max Power Dissipation (Note 1)PD250mW(TA=25 oC)
Thermal Resistance, Junction to Ambient (Note 1)RJA325OC/W(TA=25 oC)
Operating Junction Temperature and Storage Temperature RangeTJ,TSTG-55 to +150OC
Collector-Emitter Breakdown VoltageV(BR)CEO160VIC=1mA,IB=0A
Collector-Base Breakdown VoltageV(BR)CBO180VIC=100uA,IE=0A
Emitter-Base Breakdown VoltageV(BR)EBO6VIE=10uA,IC=0A
Collector-Base Cut-off CurrentICBO50nAVCB=120V,IE=0A
Emitter-Base Cut-off CurrentIEBO50nAVEB=4V,IC=0A
DC Current GainhFE80-250-VCE=5V,IC=1mA to 50mA
Collector-Emitter Saturation VoltageVCE(SAT)200mVIC=50mA,IB=5mA
Base-Emitter Saturation VoltageVBE(SAT)1.1VIC=50mA,IB=5mA
Collector-Base CapacitanceCBO6pFVCB=10V,IE=0A,f=1MHz
Emitter-Base CapacitanceCEBO30pFVEB=500mV,IC=0A,f=1MHz
Transition FrequencyFT300MHzIC=10mA,VCE=10V,f=100MHz

2506301550_PANJIT-MMBT5551-AU-R1-000A2_C5799136.pdf

Related Products
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control factory
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.