Monolithic bias resistor network digital transistor onsemi MUN5215DW1T1G for and compact electronics
Key Attributes
Model Number:
MUN5215DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5215DW1T1G
Package:
SOT-363
Product Description
Product Overview
This series of digital transistors with monolithic bias resistor networks is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) integrates a single transistor with a series base resistor and a base-emitter resistor, reducing system cost and board space. These devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified and PPAP Capable (S and NSV Prefix)
- Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 Value |
| DTC114TD/D, MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 | SOT-363 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 kΩ |
| Device | Package | Total Device Dissipation (PD) - One Junction Heated (TA = 25C) | Thermal Resistance (RJA) - One Junction Heated (TA = 25C) | Total Device Dissipation (PD) - Both Junction Heated (TA = 25C) | Thermal Resistance (RJA) - Both Junction Heated (TA = 25C) | Junction and Storage Temperature Range (TJ, Tstg) |
| MUN5215DW1 | SOT-363 | 187 mW (Note 1), 256 mW (Note 2) | 670 C/W (Note 1), 490 C/W (Note 2) | 250 mW (Note 1), 385 mW (Note 2) | 493 C/W (Note 1), 325 C/W (Note 2) | -55 to +150 C |
| NSBC114TDXV6 | SOT-563 | 357 mW (Note 1) | 350 C/W (Note 1) | 500 mW (Note 1) | 250 C/W (Note 1) | -55 to +150 C |
| NSBC114TDP6 | SOT-963 | 231 mW (Note 4), 269 mW (Note 5) | 540 C/W (Note 4), 464 C/W (Note 5) | 339 mW (Note 3) | 369 C/W (Note 4), 306 C/W (Note 5) | -55 to +150 C |
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.9 | mAdc | VEB = 6.0 V, IC = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | IC = 2.0 mA, IB = 0 (Note 6) |
| DC Current Gain | hFE | 160 | 350 | - | - | IC = 5.0 mA, VCE = 10 V (Note 6) |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | IC = 10 mA, IB = 1.0 mA (Note 6) |
| Input Voltage (off) | Vi(off) | - | 0.6 | - | Vdc | VCE = 5.0 V, IC = 100 A |
| Input Voltage (on) | Vi(on) | - | 1.4 | - | Vdc | VCE = 0.2 V, IC = 10 mA |
| Output Voltage (on) | VOL | - | - | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ |
| Output Voltage (off) | VOH | 4.9 | - | - | Vdc | VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ |
| Input Resistor | R1 | 7.0 | 10 | 13 | kΩ | - |
2410121940_onsemi-MUN5215DW1T1G_C150239.pdf
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