SOT363 Package onsemi MUN5232DW1T1G Dual NPN Bias Resistor Transistor for Enhanced Circuit Integration
Key Attributes
Model Number:
MUN5232DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5232DW1T1G
Package:
SOT-363
Product Description
Product Overview
The MUN5232DW1, NSBC143EDXV6, and NSBC143EDP6 are Dual NPN Bias Resistor Transistors (BRT) designed to replace a single transistor and its external resistor bias network. These devices integrate a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, into one package. This integration simplifies circuit design, reduces board space, and lowers component count, leading to reduced system cost.
Product Attributes
- Brand: onsemi (implied by website and publication order number)
- Certifications: AEC-Q101 Qualified (for S and NSV Prefix), RoHS Compliant, Pb-Free, Halogen Free/BFR Free
Technical Specifications
| Device | Package | R1 (k) | R2 (k) | Collector-Emitter Voltage (Vdc) | Collector Current - Continuous (mAdc) | Input Forward Voltage (Vdc) | Input Reverse Voltage (Vdc) |
| MUN5232DW1 | SOT-363 | 4.7 | 4.7 | 50 | 100 | 30 | 10 |
| NSBC143EDXV6 | SOT-563 | 4.7 | 4.7 | 50 | 100 | 30 | 10 |
| NSBC143EDP6 | SOT-963 | 4.7 | 4.7 | 50 | 100 | 30 | 10 |
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | (VCB = 50 V, IE = 0) |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | (VCE = 50 V, IB = 0) |
| Emitter-Base Cutoff Current | IEBO | - | - | 1.5 | mAdc | (VEB = 6.0 V, IC = 0) |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | (IC = 10 A, IE = 0) |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | (IC = 2.0 mA, IB = 0) |
| DC Current Gain | hFE | 15 | 30 | - | - | (IC = 5.0 mA, VCE = 10 V) |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | (IC = 10 mA, IB = 1.0 mA) |
| Input Voltage (Off) | Vi(off) | - | 1.2 | - | Vdc | (VCE = 5.0 V, IC = 100 A) |
| Input Voltage (On) | Vi(on) | - | 2.4 | - | Vdc | (VCE = 0.2 V, IC = 20 mA) |
| Output Voltage (On) | VOL | - | - | 0.2 | Vdc | (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) |
| Output Voltage (Off) | VOH | 4.9 | - | - | Vdc | (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) |
| Input Resistor | R1 | 3.3 | 4.7 | 6.1 | k | - |
| Resistor Ratio | R1/R2 | 0.8 | 1.0 | 1.2 | - | - |
| Package | Characteristic | Symbol | Max | Unit | Notes |
| SOT-363 | Total Device Dissipation (One Junction Heated) | PD | 187 | mW | TA = 25C, FR-4 @ Minimum Pad |
| SOT-363 | Total Device Dissipation (One Junction Heated) | PD | 256 | mW | TA = 25C, FR-4 @ 1.0 1.0 Inch Pad |
| SOT-363 | Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | TA = 25C, FR-4 @ Minimum Pad |
| SOT-363 | Total Device Dissipation (Both Junctions Heated) | PD | 385 | mW | TA = 25C, FR-4 @ 1.0 1.0 Inch Pad |
| SOT-363 | Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 670 | C/W | TA = 25C, FR-4 @ Minimum Pad |
| SOT-363 | Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 490 | C/W | TA = 25C, FR-4 @ 1.0 1.0 Inch Pad |
| SOT-363 | Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 493 | C/W | TA = 25C, FR-4 @ Minimum Pad |
| SOT-363 | Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 325 | C/W | TA = 25C, FR-4 @ 1.0 1.0 Inch Pad |
| SOT-563 | Total Device Dissipation (One Junction Heated) | PD | 357 | mW | TA = 25C, FR-4 @ Minimum Pad |
| SOT-563 | Total Device Dissipation (Both Junctions Heated) | PD | 500 | mW | TA = 25C, FR-4 @ Minimum Pad |
| SOT-563 | Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 350 | C/W | TA = 25C, FR-4 @ Minimum Pad |
| SOT-563 | Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 250 | C/W | TA = 25C, FR-4 @ Minimum Pad |
| SOT-963 | Total Device Dissipation (One Junction Heated) | PD | 231 | mW | TA = 25C, FR-4 @ 100 mm, 1 oz. copper traces |
| SOT-963 | Total Device Dissipation (One Junction Heated) | PD | 269 | mW | TA = 25C, FR-4 @ 500 mm, 1 oz. copper traces |
| SOT-963 | Total Device Dissipation (Both Junctions Heated) | PD | 339 | mW | TA = 25C, FR-4 @ 100 mm, 1 oz. copper traces |
| SOT-963 | Total Device Dissipation (Both Junctions Heated) | PD | 408 | mW | TA = 25C, FR-4 @ 500 mm, 1 oz. copper traces |
| SOT-963 | Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 540 | C/W | TA = 25C, FR-4 @ 100 mm, 1 oz. copper traces |
| SOT-963 | Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 464 | C/W | TA = 25C, FR-4 @ 500 mm, 1 oz. copper traces |
| SOT-963 | Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 369 | C/W | TA = 25C, FR-4 @ 100 mm, 1 oz. copper traces |
| SOT-963 | Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 306 | C/W | TA = 25C, FR-4 @ 500 mm, 1 oz. copper traces |
| All Packages | Junction and Storage Temperature Range | TJ, Tstg | 150 | C | -55 to +150 C |
2410010131_onsemi-MUN5232DW1T1G_C463830.pdf
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