Bias resistor transistor onsemi MUN5311DW1T1G designed for automotive and control change applications
Key Attributes
Model Number:
MUN5311DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5311DW1T1G
Package:
SOT-363
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network consisting of two resistors (a series base resistor and a base-emitter resistor). Designed to replace external resistor bias networks, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for automotive and other applications requiring unique site and control change requirements, with S and NSV prefixes available and AEC-Q101 qualification.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix), RoHS Compliant, Pb-Free, Halogen Free/BFR Free
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 | Thermal Resistance Junction to Ambient (RJA) |
| DTC114EP/D | N/A | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k | N/A |
| MUN5311DW1 | SOT-363 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k | 325 - 670 C/W |
| SMUN5311DW1 | SOT-363 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k | 325 - 670 C/W |
| NSBC114EPDXV6 | SOT-563 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k | 250 - 350 C/W |
| NSVBC114EPDXV6 | SOT-563 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k | 250 - 350 C/W |
| NSBC114EPDP6 | SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k | 306 - 540 C/W |
2410121940_onsemi-MUN5311DW1T1G_C152542.pdf
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