Power Conversion NH B5819WS Schottky Barrier Rectifier for in High Frequency Inverters and Converters
Key Attributes
Model Number:
B5819WS
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@40V
Non-Repetitive Peak Forward Surge Current:
9A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
B5819WS
Package:
SOD-323
Product Description
Product Overview
The B5817WS-B5819WS series are Schottky Barrier Rectifiers from Niu Hang Specification Electronic Co. Ltd. They offer low forward voltage drop for high efficiency, low leakage current for high reliability, and high forward surge capability. These rectifiers are suitable for high-frequency inverters, AC/DC converters, DC/DC converters, and LED drivers.
Product Attributes
- Brand: Niu Hang Specification Electronic Co. Ltd
- Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
- Mounting Position: Any
- Lead Free: Lead Free Finish, RoHS Compliant
- Weight: App. 0.0041 grams (0.0001 ounce)
- Marking: White band denotes cathode
- Model Suffixes: Sx=Modle,x=J,K,L (B5817WS: SJ, B5818WS: SK, B5819WS: SL)
Technical Specifications
| Parameter | Symbol | B5817WS | B5818WS | B5819WS | Unit | Test Conditions |
| Maximum repetitive peak reverse voltage | VRRM | 80%*VRRM | 80%*VRRM | 80%*VRRM | V | TA=25 |
| Maximum DC blocking voltage | VR | 100 | 120 | 150 | V | TA=25 |
| Maximum average forward rectified current | IF(AV) | 1.0 | 1.0 | 1.0 | A | TA=25 (see fig.1) |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) | IFSM | 20 | 30 | 40 | A | TA=25 (see fig.5) |
| Current Squared Time Per Diode (t<8.3ms) | I2t | 21 | 28 | 40 | A2sec | IF= 1.0 A, VR= VRRM |
| Maximum instantaneous forward voltage | VF | 0.45 | 0.55 | 0.60 | V | IF= 1.0 A, TA=25 (see fig.2) (Note 1) |
| Maximum instantaneous reverse current at rated DC blocking voltage | IR | 0.41 | 0.51 | 0.55 | mA | VR= 80%*VRRM, TA=25 (see fig.3) (Note 1) |
| Typical junction capacitance | CJ | 14 | 20 | 21 | pF | VR= 4V, 1MHz (see fig.4) |
| Storage temperature range | TSTG | -55 to 150 | ||||
| Operating junction temperature | TJ | -55 to 150 | ||||
2403121721_NH-B5819WS_C7428002.pdf
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