Epoxy molded ultrafast diode onsemi MUR1100ERLG with 1 amp forward current and 1000 volt reverse voltage rating
Key Attributes
Model Number:
MUR1100ERLG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Reverse Leakage Current (Ir):
10uA@1kV
Reverse Recovery Time (trr):
100ns
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.75V@1A
Current - Rectified:
1A
Mfr. Part #:
MUR1100ERLG
Package:
DO-41
Product Description
Product Overview
The MUR180E and MUR1100E are state-of-the-art Ultrafast "E" Series SWITCHMODE Power Rectifiers with high reverse energy capability. Designed for use in switching power supplies, inverters, and as free-wheeling diodes, these devices offer excellent protection against voltage transients in inductive load circuits. Key features include a guaranteed 10 mJoule avalanche energy, ultrafast 75 nanosecond recovery time, and a high operating junction temperature of 175C.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
- Pb-Free Devices: Yes
- Case: Epoxy, Molded
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Certifications: Pb-Free (inherently)
Technical Specifications
| Model | Reverse Voltage (V) | Average Rectified Forward Current (A) | Non-Repetitive Peak Surge Current (A) | Operating Junction Temperature (C) | Reverse Recovery Time (ns) | Avalanche Energy (mJ) |
|---|---|---|---|---|---|---|
| MUR180E | 800 | 1.0 @ TA = 95C | 35 | -65 to +175 | 75 (typ) | 10 (guaranteed) |
| MUR1100E | 1000 | 1.0 @ TA = 95C | 35 | -65 to +175 | 75 (typ) | 10 (guaranteed) |
2410010103_onsemi-MUR1100ERLG_C35292.pdf
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