power diode onsemi MBRA160T3G featuring epitaxial construction oxide passivation and low forward voltage drop
Product Overview
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features include a small compact surface mountable package with J-Bent leads, rectangular package for automated handling, highly stable oxide passivated junction, very low forward voltage drop, and a guard-ring for stress protection.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AECQ101 Qualified (NRVBA Prefix), PPAP Capable (NRVBA Prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant
- Package: SMA (Surface Mount Package)
Technical Specifications
| Rating | Symbol | Value | Unit | Notes |
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 60 | V | |
| Average Rectified Forward Current (At Rated VR, TC = 105C) | IO | 1.0 | A | |
| Average Rectified Forward Current (At Rated VR, TC = 70C) | IO | 2.1 | A | |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 60 | A | |
| Storage/Operating Case Temperature | Tstg, TC | -55 to +150 | C | |
| Operating Junction Temperature | TJ | -55 to +150 | C | Note 1 |
| Voltage Rate of Change (Rated VR, TJ = 25C) | dv/dt | 10,000 | V/s | |
| Thermal Resistance, Junction-to-Lead | RJL | 35 | C/W | Note 2 |
| Thermal Resistance, Junction-to-Ambient | RJA | 86 | C/W | Note 2 |
| Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25C) | VF | 0.510 | V | Note 3 |
| Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 125C) | VF | 0.475 | V | Note 3 |
| Maximum Instantaneous Reverse Current (VR = 60 V, TJ = 25C) | IR | 0.2 | mA | Note 3 |
| Maximum Instantaneous Reverse Current (VR = 60 V, TJ = 125C) | IR | 20 | mA | Note 3 |
Notes:
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA.
2. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4.
3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
2410121944_onsemi-MBRA160T3G_C49187.pdf
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