Switching NH NTS036N03S N Channel Enhancement Mode Power MOSFET Suitable for Battery Management Systems

Key Attributes
Model Number: NTS036N03S
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
265pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
2.8nF@15V
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
NTS036N03S
Package:
TO-252
Product Description

Product Overview

The NTS036N03S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability in demanding applications. Typical uses include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: Niuhang (NH)
  • Product Line Code: FF
  • Model ID: NTS036N03S
  • Package: TO-252
  • Material: Pb-Free, RoHS Compliant
  • Weight: Approx. 0.321 Grams (0.01132 Ounce)

Technical Specifications

Parameter Test Conditions Symbol Min. Typ. Max. Unit
PRODUCT SUMMARY
Drain-Source Voltage Min. @ Tj VDS 30 -- -- V
Continuous Drain Current Min. @ Ta ID 120 -- -- A
RDS(ON) Type @ 10V RDS(ON) -- 2.80 4.00 m
Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified)
Drain-Source Voltage -- VDS -- -- 30 V
Gate-Source Voltage -- VGS -- -- 20 V
Continuous Drain Current (Note 1) Ta= 25 ID -- -- 120 A
Continuous Drain Current (Note 1) Ta= 100 ID -- -- 96 A
Drain Current-Pulsed (Note 1) TJ< 175 IDM -- -- 480 A
Maximum Power Dissipation Ta= 25 PD -- -- 75 W
Power Dissipation Derating Factor Above 25 DF -- 0.50 -- W/
Power Dissipation Derating Factor Ta= 100 DF -- -- 38 W
Junction Temperature -- TJ -55 -- 175
Storage Temperature Range -- TSTD -55 -- 175
Avalanche Current, Single Pulse (Note 1) L= 0.5 mH IAS -- -- 32 A
Single Pulse Avalanche Energy (Note 1) L= 0.5 mH,VDD= 15 V EAS -- 256 -- mJ
Single Pulse Avalanche Energy (Note 1) IAS= 32 A,RG= 10 Starting Tj=25 ,VG = 10 V EAS -- -- 256 mJ
Thermal Characteristics (Ta=25 Unless Otherwise Specified)
Thermal Resistance Junction To Ambient Still Air Environment With Ta =25C RJA -- 60.0 -- /W
Thermal Resistance Junction-Case Device Mounted On 1 in 2 FR-4 Board With 2oz RJC -- 2.0 -- /W
Electrical Characteristics (Ta=25 Unless Otherwise Specified)
Static off Characteristics
Drain-Source Breakdown Voltage VGS=0V,ID=250uA BV DSS 30 -- -- V
Bvdss Temperature Coefficient ID=250uA,Reference25 BV DSS/T J -- 0.029 -- V/
Drain-Source Leakage Current VDS= 30 V,VGS=0V I DSS -- -- 1 uA
Gate-Body Leakage Current VGS= 20 V,VDS=0V I GSS -- -- 100 nA
Forward Transconductance ID= 20 A,VDS= 5 V gfs -- 28 -- S
Static on Characteristics
Gate Threshold Voltage VGS= VDS ID=250uA V GS(TH) 1.0 1.8 2.6 V
Drain-Source On Resistance ID= 20 A,VGS= 10 V R DS(ON) -- 2.80 4.00 m
Drain-Source On Resistance ID= 20 A,VGS= 4.5 V R DS(ON) -- 3.22 4.60 m
Dynamic Characteristics
Gate Resistance VGS=0V,VDS=0V, Freq.=1MHz R g -- 1.70 --
Input Capacitance VDS= 15 V C iss -- 2800.0 -- pF
Output Capacitance VGS= 0 V C oss -- 290.0 -- pF
Reverse Transfer Capacitance F= 1 MHZ C rss -- 265.0 -- pF
Switching Paramters (Test Circuit & Waveform See Fig.14)
Turn-On Delay Time VDS= 15 V t d(on) -- 15.0 -- ns
Turn-On Rise Time VGS= 10 V t r -- 36.0 -- ns
Turn-Off Delay Time RL= 1.2 t d(off) -- 44.0 -- ns
Turn-Off Rise Time RG= 10 t f -- 22.0 -- ns
Gate Charge Paramters (Test Circuit & Waveform See Fig.15)
Total Gate Charge VDS= 15 V Q g -- 50.0 -- nC
Gate-Source Charge VGS= 10 V Q gs -- 5.0 -- nC
Gate-Drain Charge ID= 20 A Q gd -- 10.0 -- nC
Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17)
Max. Diode Forward Current -- I S -- -- 120 A
Max. Pulsed Forward Current -- I SM -- -- 420 A
Diode Forward Voltage ID= 20 A,VGS=0V V SD -- 0.86 1.2 V
Reverse Recovery Time ID= 20 A,di/dt= 100 A/us t rr -- 55 -- ns
Reverse Recovery Charge VGS= 10 V,VDS= 15 V Q rr -- 40.0 -- uC
OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS
Dimension Unit Min. Typ. Max. Unit Min. Typ. Max.
A mm 6.100 -- 7.100 inches 0.240 -- 0.280
B mm 4.800 -- 5.800 inches 0.189 -- 0.228
C mm 1.950 -- 2.550 inches 0.077 -- 0.100
D mm 0.350 -- 0.750 inches 0.014 -- 0.030
E mm 9.250 -- 10.750 inches 0.364 -- 0.423
F mm 5.600 -- 6.600 inches 0.220 -- 0.260
G mm 2.500 -- 3.100 inches 0.098 -- 0.122
H mm 0.650 -- 1.050 inches 0.026 -- 0.041
J mm 2.100 -- 2.500 inches 0.083 -- 0.098
L mm 1.000 -- 1.400 inches 0.039 -- 0.055
M mm 0.350 -- 0.750 inches 0.014 -- 0.030
PACKING INFORMATION
Package Code Package Method Inner Box Size LWH(mm) Quantity (Pcs/Inner Box) Outer Carton Size LWH(mm) Quantity (Pcs/Carton)
TO-252 Tape Reel 34034050 5000 360x360x260 25000

2411011351_NH-NTS036N03S_C41784117.pdf

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