P Channel Logic Level Enhancement MOSFET NIKO SEM PV537BA with Halogen Free Lead Free Certification
Key Attributes
Model Number:
PV537BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
RDS(on):
7.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
271pF
Input Capacitance(Ciss):
2.664nF
Output Capacitance(Coss):
374pF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
56nC
Mfr. Part #:
PV537BA
Package:
SOP-8
Product Description
Product Overview
The PV537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a robust performance with key features like low on-resistance and high current handling capabilities, making it suitable for power switching and control circuits. This device is Halogen-free & Lead-Free, adhering to environmental standards.
Product Attributes
- Brand: NIKO-SEM
- Model: PV537BA
- Package: SOP-8
- Certifications: Halogen-free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current (TA = 25 °C) | ID | -11 | A | |||
| Continuous Drain Current (TA = 70 °C) | ID | -8.7 | A | |||
| Pulsed Drain Current | IDM | -50 | A | |||
| Avalanche Current | IAS | -35 | A | |||
| Avalanche Energy (L = 0.1mH) | EAS | 61 | mJ | |||
| Power Dissipation (TA = 25 °C) | PD | 1.8 | W | |||
| Power Dissipation (TA = 70 °C) | PD | 1.2 | W | |||
| Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RθJA | (TA = 25 °C, mounted on 1in² FR-4 board with 2oz. Copper, still air) | 68 | °C / W | ||
| Junction-to-Case | RθJC | 25 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1 | -1.6 | -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±25V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | µA | ||
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | VDS = -20V, VGS = 0V | -10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -11A | 7.2 | 9 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -11A | 10.4 | 14 | mΩ | |
| Forward Transconductance | gfs | VDS = -10V, ID = -11A | 40 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 2664 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = -15V, f = 1MHz | 374 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -15V, f = 1MHz | 271 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 3.7 | Ω | ||
| Total Gate Charge | Qg(VGS=-10V) | VDS = -15V , ID = -11A | 56 | nC | ||
| Total Gate Charge | Qg(VGS=-4.5V) | VDS = -15V , ID = -11A | 28 | nC | ||
| Gate-Source Charge | Qgs | VDS = -15V , ID = -11A | 9 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -15V , ID = -11A | 13 | nC | ||
| Turn-On Delay Time | td(on) | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 22 | nS | ||
| Rise Time | tr | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 26 | nS | ||
| Turn-Off Delay Time | td(off) | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 102 | nS | ||
| Fall Time | tf | VDD = -15V ID & -11A, VGS = -10V, RGEN = 6Ω | 75 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | -11 | A | |||
| Forward Voltage | VSD | IF = -11A, VGS = 0V | -1.3 | V | ||
| Reverse Recovery Time | trr | IF=-11A, dI/dt=100A/µs | 26 | nS | ||
| Reverse Recovery Charge | Qrr | IF=-11A, dI/dt=100A/µs | 14 | µC | ||
2511261405_NIKO-SEM-PV537BA_C429897.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
