Super fast recovery rectifier diode onsemi US1MFA with loss and UL 94V 0 flammability classification

Key Attributes
Model Number: US1MFA
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@1kV
Reverse Recovery Time (trr):
75ns
Voltage - DC Reverse (Vr) (Max):
1kV
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
US1MFA
Package:
SOD-123FL
Product Description

Product Overview

The US1AFA-US1MFA series are Super Fast Surface Mount Rectifiers featuring a glass-passivated chip junction for low power loss and high efficiency. They offer fast switching reverse recovery times of 50-75 ns, high surge capacity, and UL 94V-0 flammability classification. These devices are Pb-Free, Halogen Free, and RoHS Compliant, with an option for NRV prefix for automotive applications requiring AEC-Q101 qualification and PPAP capability. Suitable for various electronic applications requiring efficient rectification and fast switching.

Product Attributes

  • Brand: onsemi
  • Certifications: UL 94V-0, AEC-Q101 Qualified (NRV prefix), PPAP Capable (NRV prefix), RoHS Compliant
  • Material: Glass Passivated Chip
  • Features: Pb-Free, Halogen Free, MSL 1 per J-STD-020

Technical Specifications

ParameterUS1AFAUS1BFAUS1DFAUS1FFAUS1GFAUS1JFAUS1KFAUS1MFAUnit
Repetitive Peak Reverse Voltage (VRRM)501002003004006008001000V
RMS Reverse Voltage (VRMS)3570140210280420560700V
DC Blocking Voltage (VR)501002003004006008001000V
Average Forward Rectified Current (IF(AV))1A
Peak Forward Surge Current (IFSM) (8.3 ms)30A
Operating Junction Temperature Range (TJ)55 to +150C
Storage Temperature Range (TSTG)55 to +150C
Maximum Instantaneous Forward Voltage (VF) (IF = 1 A)0.951.301.70V
Maximum Reverse Current (IR) (TJ = 25C)5A
Maximum Reverse Current (IR) (TJ = 125C)150A
Typical Junction Capacitance (CJ) (VR = 4.0 V, f = 1.0 MHz)2015pF
Maximum Reverse Recovery Time (Trr) (IF = 0.5 A, IR = 1 A, Irr = 0.25 A)5075ns

2410122011_onsemi-US1MFA_C894760.pdf

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