NIKO SEM PE537BA P Channel Logic Level Enhancement Mode Transistor Designed for Compact and Circuits
Key Attributes
Model Number:
PE537BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
286pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
286pF
Input Capacitance(Ciss):
2.803nF@15V
Pd - Power Dissipation:
16.7W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
PE537BA
Package:
PDFN(3x3)
Product Description
Product Overview
The PE537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers advantages such as logic-level gate drive and a PDFN 3x3P package, making it suitable for space-constrained designs. This transistor is Halogen-free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Model: PE537BA
- Package: PDFN 3x3P
- Certifications: Halogen-free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit | |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Drain-Source Voltage | VDS | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current | ID | TC = 25 °C | -33 | A | |
| Continuous Drain Current | ID | TC = 100 °C | -22 | A | |
| Continuous Drain Current | ID | TA = 25 °C | -12 | A | |
| Continuous Drain Current | ID | TA = 70 °C | -9.6 | A | |
| Pulsed Drain Current | IDM | -100 | A | ||
| Avalanche Current | IAS | -34 | A | ||
| Avalanche Energy | EAS | L = 0.1mH | 57.8 | mJ | |
| Power Dissipation | PD | TC = 25 °C | 16.7 | W | |
| Power Dissipation | PD | TC = 100 °C | 6.7 | W | |
| Power Dissipation | PD | TA = 25 °C | 2 | W | |
| Power Dissipation | PD | TA = 70 °C | 1.3 | W | |
| Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | ||
| THERMAL RESISTANCE RATINGS | |||||
| Junction-to-Ambient | RθJA | 60 | °C / W | ||
| Junction-to-Case | RθJC | 7.5 | |||
| PRODUCT SUMMARY | |||||
| Breakdown Voltage | V(BR)DSS | -30 | V | ||
| On-State Resistance | RDS(ON) | 8.5 | mΩ | ||
| Continuous Drain Current | ID | -33 | A | ||
| ELECTRICAL CHARACTERISTICS | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1.6 | -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | µA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = 0V, TJ = 55 °C | -10 | µA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -12A | 8.5 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -12A | 14 | mΩ | |
| Forward Transconductance | gfs | VDS = -10V, ID = -12A | 35 | S | |
| DYNAMIC CHARACTERISTICS | |||||
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 2803 | pF | |
| Output Capacitance | Coss | 371 | pF | ||
| Reverse Transfer Capacitance | Crss | 286 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 4 | Ω | |
| Total Gate Charge | Qg(VGS=-10V) | VDS = -15V , ID = -12A | 56 | nC | |
| Total Gate Charge | Qg(VGS=-4.5V) | 28 | nC | ||
| Gate-Source Charge | Qgs | 8 | |||
| Gate-Drain Charge | Qgd | 12 | |||
| Turn-On Delay Time | td(on) | VDD = -10V ID ≈ -12A, VGS = -10V, RGEN = 6Ω | 21 | nS | |
| Rise Time | tr | 25 | nS | ||
| Turn-Off Delay Time | td(off) | 100 | nS | ||
| Fall Time | tf | 73 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||
| Continuous Current | IS | -12.8 | A | ||
| Forward Voltage | VSD | IF = -12A, VGS = 0V | -1.3 | V | |
| Reverse Recovery Time | trr | IF=-12A, dI/dt=100A/µs | 26 | nS | |
| Reverse Recovery Charge | Qrr | 14 | nC | ||
2411220604_NIKO-SEM-PE537BA_C3034556.pdf
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