NIKO SEM PE507BA P Channel Logic Level Enhancement Mode Transistor for Switching and Power Management
Key Attributes
Model Number:
PE507BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14.5mΩ@4.5V,9A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
327pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.1nF@15V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
49.1nC@10V
Mfr. Part #:
PE507BA
Package:
DFN-8(3x3)
Product Description
P-Channel Logic Level Enhancement Mode Field Effect Transistor - PE507BA
The PE507BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It offers advantages such as halogen-free and lead-free compliance, making it suitable for environmentally conscious designs. This transistor is ideal for use in power management and switching applications where a P-channel, logic-level device is required.
Product Attributes
- Brand: NIKO-SEM
- Model: PE507BA
- Package: PDFN 3x3P
- Certifications: Halogen-free & Lead-Free
- Revision: REV1.2
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current | ID | TC = 25 °C | -42 | A |
| TC = 100 °C | -26 | A | ||
| Power Dissipation | PD | TC = 25 °C | 37 | W |
| TC = 100 °C | 15 | W | ||
| Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -9A | 14.5 | mΩ |
| Forward Transconductance | gfs | VDS = -10V, ID = -10A | 32 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 2100 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = -15V, f = 1MHz | 365 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -15V, f = 1MHz | 327 | pF |
| Total Gate Charge | Qg | VDS = -15V , VGS = -10V, ID = -10A | 49.1 | nC |
| Turn-On Delay Time | td(on) | VDD = -15V ID ≈ -10A, VGS = -10V, RGEN = 6Ω | 24 | nS |
| Rise Time | tr | VDD = -15V ID ≈ -10A, VGS = -10V, RGEN = 6Ω | 24 | nS |
| Turn-Off Delay Time | td(off) | VDD = -15V ID ≈ -10A, VGS = -10V, RGEN = 6Ω | 85 | nS |
| Fall Time | tf | VDD = -15V ID ≈ -10A, VGS = -10V, RGEN = 6Ω | 50 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | -30 | A | |
| Forward Voltage | VSD | IF = -10A, VGS = 0V | -1.2 | V |
| Reverse Recovery Time | trr | IF=-10A, dI/dt=100A/μs | 20.5 | nS |
| Reverse Recovery Charge | Qrr | IF=-10A, dI/dt=100A/μs | 8.3 | μC |
2411220101_NIKO-SEM-PE507BA_C532971.pdf
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