600 Volt 20 Amp IGBT onsemi FGP20N60UFDTU Suitable for PFC Systems Solar Inverters and UPS Solutions
Key Attributes
Model Number:
FGP20N60UFDTU
Product Custom Attributes
Pd - Power Dissipation:
165W
Td(off):
87ns
Td(on):
13ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
40pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Operating Temperature:
-55℃~+150℃
Gate Charge(Qg):
63nC
Output Capacitance(Coes):
110pF
Reverse Recovery Time(trr):
35ns
Switching Energy(Eoff):
260uJ
Turn-On Energy (Eon):
380uJ
Mfr. Part #:
FGP20N60UFDTU
Package:
TO-220
Product Description
Product Overview
The FGP20N60UFD is a 600 V, 20 A Field Stop IGBT from ON Semiconductor, utilizing novel field stop IGBT technology. It offers optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, and PFC systems. Key features include high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 20 A), high input impedance, and fast switching. This product is RoHS Compliant.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector to Emitter Voltage | VCES | 600 | V | |||
| Gate to Emitter Voltage | VGES | ±20 | V | |||
| Transient Gate-to-Emitter Voltage | ±30 | V | ||||
| Collector Current @ TC = 25°C | IC | 40 | A | |||
| Collector Current @ TC = 100°C | IC | 20 | A | |||
| Pulsed Collector Current @ TC = 25°C | ICM (1) | 60 | A | |||
| Maximum Power Dissipation @ TC = 25°C | PD | 165 | W | |||
| Maximum Power Dissipation @ TC = 100°C | PD | 66 | W | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds | TL | 300 | °C | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case (IGBT) | RθJC(IGBT) | - | 0.76 | °C/W | ||
| Thermal Resistance, Junction to Case (Diode) | RθJC(Diode) | - | 2.51 | °C/W | ||
| Thermal Resistance, Junction to Ambient | RθJA | - | 62.5 | °C/W | ||
| Electrical Characteristics of the IGBT | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 250μA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage | ΔBVCES / ΔTJ | VGE = 0 V, IC = 250 μA | - | 0.6 | - | V/°C |
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V, TC = 25°C | - | - | 250 | μA |
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V, TC = 125°C | - | - | 1 | mA |
| G-E Leakage Current | IGES | VGE = VGES, VCE = 0V | - | - | ±400 | nA |
| G-E Threshold Voltage | VGE(th) | IC = 250 μA, VCE = VGE | 4.0 | 5.0 | 6.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 20 A, VGE = 15 V | - | 1.8 | 2.4 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 20 A, VGE = 15 V, TC = 125°C | - | 2.0 | - | V |
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 940 | - | pF |
| Output Capacitance | Coes | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 40 | - | pF | |
| Switching Characteristics (TC = 25°C) | ||||||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 13 | - | ns |
| Rise Time | tr | - | 17 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 87 | - | ns | |
| Fall Time | tf | - | 32 | 64 | ns | |
| Turn-On Switching Loss | Eon | - | 0.38 | - | mJ | |
| Turn-Off Switching Loss | Eoff | - | 0.26 | - | mJ | |
| Total Switching Loss | Ets | - | 0.64 | - | mJ | |
| Switching Characteristics (TC = 125°C) | ||||||
| Turn-On Delay Time | td(on) | VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 13 | - | ns |
| Rise Time | tr | - | 16 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 92 | - | ns | |
| Fall Time | tf | - | 63 | - | ns | |
| Turn-On Switching Loss | Eon | - | 0.41 | - | mJ | |
| Turn-Off Switching Loss | Eoff | - | 0.36 | - | mJ | |
| Total Switching Loss | Ets | - | 0.77 | - | mJ | |
| Total Gate Charge | Qg | VCE = 400 V, IC = 20 A, VGE = 15 V | - | 63 | - | nC |
| Gate to Emitter Charge | Qge | - | 7 | - | nC | |
| Gate to Collector Charge | Qgc | - | 32 | - | nC | |
| Electrical Characteristics of the Diode | ||||||
| Diode Forward Voltage | VFM | IF = 10 A, TC = 25°C | - | 1.9 | 2.5 | V |
| Diode Forward Voltage | VFM | IF = 10 A, TC = 125°C | - | 1.7 | - | V |
| Diode Reverse Recovery Time | trr | IF = 10 A, dIF/dt = 200 A/μs, TC = 25°C | - | 35 | - | ns |
| Diode Reverse Recovery Time | trr | IF = 10 A, dIF/dt = 200 A/μs, TC = 125°C | - | 57 | - | ns |
| Diode Reverse Recovery Charge | Qrr | TC = 25°C | - | 41 | - | nC |
| Diode Reverse Recovery Charge | Qrr | TC = 125°C | - | 96 | - | nC |
2410121619_onsemi-FGP20N60UFDTU_C463254.pdf
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