NIKO-SEM PA410BD N Channel Enhancement Mode Transistor Ideal for Power Switching and Amplification
Key Attributes
Model Number:
PA410BD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
22pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
330pF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
PA410BD
Package:
TO-252-2
Product Description
Product Overview
The PA410BD is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers robust performance with high voltage and current handling capabilities, making it suitable for power switching and amplification circuits.
Product Attributes
- Brand: NIKO-SEM
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 10 | A |
| Continuous Drain Current | ID | TC = 100 °C | 7 | A |
| Pulsed Drain Current | IDM | 30 | A | |
| Avalanche Current | IAS | 10 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 5 | mJ |
| Power Dissipation | PD | TC = 25 °C | 35 | W |
| Power Dissipation | PD | TC = 100 °C | 14 | W |
| Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Case | RθJC | TYPICAL | 3.5 | °C / W |
| Junction-to-Ambient | RθJA | TYPICAL | 62.5 | °C / W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 1.9 - 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V , VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 125 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 5A | 103 - 170 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V , ID = 5A | 93 - 140 | mΩ |
| Forward Transconductance | gfs | VDS = 10V, ID = 5A | 13 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 330 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1MHz | 50 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1MHz | 22 | pF |
| Total Gate Charge | Qg | VGS = 10V, VDS = 50V, ID = 5A | 8.6 | nC |
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 50V, ID = 5A | 1.2 | nC |
| Gate-Drain Charge | Qgd | VGS = 10V, VDS = 50V, ID = 5A | 3.5 | nC |
| Turn-On Delay Time | td(on) | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 22 | nS |
| Rise Time | tr | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 60 | nS |
| Turn-Off Delay Time | td(off) | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 30 | nS |
| Fall Time | tf | VDS = 50V ID ≈ 5A, VGS = 10V, RGEN =6Ω | 40 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 10 | A | |
| Forward Voltage | VSD | IF = 5A, VGS = 0V | 1.1 | V |
| Reverse Recovery Time | trr | IF = 5A, dlF/dt = 100A / μS | 25 | nS |
| Reverse Recovery Charge | Qrr | IF = 5A, dlF/dt = 100A / μS | 25 | nC |
2410121447_NIKO-SEM-PA410BD_C532967.pdf
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