NIKO-SEM P3710BD N Channel Enhancement Mode FET with High Pulsed Drain Current and Low Thermal Resistance
Key Attributes
Model Number:
P3710BD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
53pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
996pF@25V
Pd - Power Dissipation:
20W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
P3710BD
Package:
TO-252-2
Product Description
Product Overview
The P3710BD is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with features like low on-resistance and robust thermal characteristics, making it suitable for power management solutions.
Product Attributes
- Brand: NIKO-SEM
- Model: P3710BD
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 25 | A |
| Continuous Drain Current | ID | TC = 100 °C | 16 | A |
| Pulsed Drain Current | IDM | 75 | A | |
| Avalanche Current | IAS | 16 | A | |
| Avalanche Energy | EAS | 128 | mJ | |
| Power Dissipation | PD | TC = 25 °C | 50 | W |
| Power Dissipation | PD | TC = 100 °C | 20 | W |
| Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Case | RθJC | 2.5 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1 - 2 - 3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V, TJ=125 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | 35 - 48 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 10A | 28 - 37 | mΩ |
| Forward Transconductance | gfs | VDS = 10V, ID = 10A | 23 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 996 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1MHz | 127 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1MHz | 53 | pF |
| Total Gate Charge | Qg | VDS = 50V, ID = 10A, VGS = 10V | 25 | nC |
| Gate-Source Charge | Qgs | VDS = 50V, ID = 10A, VGS = 10V | 3.9 | nC |
| Gate-Drain Charge | Qgd | VDS = 50V, ID = 10A, VGS = 10V | 8 | nC |
| Turn-On Delay Time | td(on) | VDD = 50V, ID ≈ 10A, VGS = 10V, RGS = 6Ω | 29 | nS |
| Rise Time | tr | VDD = 50V, ID ≈ 10A, VGS = 10V, RGS = 6Ω | 2 | nS |
| Turn-Off Delay Time | td(off) | VDD = 50V, ID ≈ 10A, VGS = 10V, RGS = 6Ω | 39 | nS |
| Fall Time | tf | VDD = 50V, ID ≈ 10A, VGS = 10V, RGS = 6Ω | 15 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 25 | A | |
| Forward Voltage | VSD | IF = 10A, VGS = 0V | 1.2 | V |
| Reverse Recovery Time | trr | IF = 10A, dlF/dt = 100A / μS | 36 | nS |
| Reverse Recovery Charge | Qrr | IF = 10A, dlF/dt = 100A / μS | 52 | nC |
2411192317_NIKO-SEM-P3710BD_C532963.pdf
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