onsemi AFGHL75T65SQ Field Stop Trench IGBT Featuring 75 Amp 650 Volt Rating and Low Saturation Voltage
Key Attributes
Model Number:
AFGHL75T65SQ
Product Custom Attributes
Td(off):
106ns
Pd - Power Dissipation:
375W
Td(on):
23ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11.2pF
Input Capacitance(Cies):
4.574nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.4V@75mA
Gate Charge(Qg):
139nC@15V
Output Capacitance(Coes):
289.4pF
Switching Energy(Eoff):
210uJ
Turn-On Energy (Eon):
610uJ
Mfr. Part #:
AFGHL75T65SQ
Package:
TO-247-3L
Product Description
Product Overview
The AFGHL75T65SQ is a Field Stop Trench IGBT from onsemi, utilizing novel 4th generation IGBT technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in various applications where a reverse recovery specification is not required. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage.
Product Attributes
- Brand: onsemi
- Certifications: AECQ101 Qualified and PPAP Capable
Technical Specifications
| Part Number | Description | VCES (V) | IC (A) | VCE(Sat) (V) @ IC=75A | TJ Max (C) | Package |
| AFGHL75T65SQ | Field Stop Trench IGBT | 650 | 75 | 1.6 (Typ.) | 175 | TO-247-3L |
2410122106_onsemi-AFGHL75T65SQ_C2902240.pdf
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