PANJIT 2N7002K AU R1 000A2 N Channel MOSFET with High Density Cell Design and AEC Q101 Qualification
Key Attributes
Model Number:
2N7002K-AU_R1_000A2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
8pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
500mW
Input Capacitance(Ciss):
35pF@25V
Gate Charge(Qg):
800pC@5V
Mfr. Part #:
2N7002K-AU_R1_000A2
Package:
SOT-23
Product Description
Product Overview
The 2N7002K-AU is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance and very low leakage current in the off condition. This MOSFET is specially designed for battery-operated systems and various driver applications, including solid-state relays, displays, and memories. It is AEC-Q101 qualified and lead-free, complying with EU RoHS 2.0 and using green molding compound.
Product Attributes
- Brand: Not explicitly stated, but implied to be Panjit International Inc.
- Origin: Not explicitly stated
- Material: Green molding compound as per IEC 61249 standard
- Color: Not applicable
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics | VDS | 60 | V | |||
| VGS | +20 | V | ||||
| ID | TA=25oC (Note 4) | 300 | mA | |||
| IDM | (Note 1) | 2000 | ||||
| PD | TA=25oC | 500 | mW | |||
| Derate above 25oC | 4 | mW/ oC | ||||
| TJ,TSTG | -55~150 | oC | ||||
| RJA | Typical Thermal Resistance - Junction to Ambient (Note 3,4) | 250 | oC/W | |||
| Electrical Characteristics | BVDSS | VGS=0V,ID=10uA | 60 | - | - | V |
| VGS(th) | VDS=VGS, ID=250uA | 1 | - | 2.5 | ||
| RDS(on) | VGS=10V,ID=500mA | - | - | 3 | ||
| RDS(on) | VGS=4.5V,ID=200mA | - | - | 4 | ||
| IDSS | VDS=60V,VGS=0V | - | - | 1 | uA | |
| IGSS | VGS=+20V,VDS=0V | - | - | +10 | ||
| gfs | VDS=15V, ID=250mA | 100 | - | - | mS | |
| Dynamic (Note 5) | Qg | VDS=15V, ID=250mA, VGS=5V (Note 1,2) | - | 0.8 | - | nC |
| Qgs | - | 0.35 | - | |||
| Qgd | - | 0.2 | - | |||
| Ciss | VDS=25V, VGS=0V, f=1MHZ | - | 35 | - | pF | |
| Coss | - | 13 | - | |||
| Crss | - | 8 | - | |||
| Switching Characteristics (Note 1,2) | td(on) | VDD=30V, ID=200mA, VGS=10V, RG=10 | - | 2.7 | - | ns |
| tr | - | 19 | - | |||
| td(off) | - | 15 | - | |||
| tf | - | 23 | - | |||
| Drain-Source Diode | IS | Maximum Continuous Drain-Source Diode Forward Current | --- | - | 300 | mA |
| VSD | IS=200mA, VGS=0V | - | 0.82 | 1.3 | V |
2410121947_PANJIT-2N7002K-AU-R1-000A2_C5356094.pdf
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