Durable Insulated Gate Bipolar Transistor onsemi NGTB50N120FL2WG with 1200 Volt Rating and Pb Free Device Certification
Key Attributes
Model Number:
NGTB50N120FL2WG
Product Custom Attributes
Pd - Power Dissipation:
267W
Td(off):
282ns
Td(on):
118ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
139pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@400uA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
311nC@15V
Reverse Recovery Time(trr):
256ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
4.4mJ
Input Capacitance(Cies):
7.383nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
233pF
Mfr. Part #:
NGTB50N120FL2WG
Package:
TO-247
Product Description
Product Overview
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, providing superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications, incorporating a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop Technology, a TJmax of 175C, soft fast reverse recovery diode, optimization for high-speed switching, and a 10 μs short circuit capability. These are Pb-Free Devices.
Product Attributes
- Brand: onsemi (implied by www.onsemi.com)
- Material: Pb-Free Devices
- Certifications: Pb-Free
Technical Specifications
| Rating | Symbol | Value | Unit | Test Conditions |
| Collectoremitter voltage | VCES | 1200 | V | |
| Collector current @ TC = 25C | IC | 100 | A | |
| Collector current @ TC = 100C | 50 | A | ||
| Pulsed collector current, Tpulse limited by TJmax | ICM | 200 | A | |
| Diode forward current @ TC = 25C | IF | 100 | A | |
| Diode forward current @ TC = 100C | 50 | A | ||
| Diode pulsed current, Tpulse limited by TJmax | IFM | 200 | A | |
| Gateemitter voltage | VGE | 20 | V | |
| Transient gateemitter voltage (Tpulse = 5 μs, D < 0.10) | ±30 | V | ||
| Power Dissipation @ TC = 25C | PD | 535 | W | |
| Power Dissipation @ TC = 100C | 267 | W | ||
| Short Circuit Withstand Time | TSC | 10 | μs | VGE = 15 V, VCE = 500 V, TJ ≤ 150C |
| Operating junction temperature range | TJ | -55 to +175 | °C | |
| Storage temperature range | Tstg | -55 to +175 | °C | |
| Lead temperature for soldering, 1/8 from case for 5 seconds | TSLD | 260 | °C | |
| Thermal resistance junctiontocase, for IGBT | R JC | 0.28 | °C/W | |
| Thermal resistance junctiontocase, for Diode | R JC | 0.5 | °C/W | |
| Thermal resistance junctiontoambient | R JA | 40 | °C/W | |
| Collectoremitter breakdown voltage, gateemitter shortcircuited | V(BR)CES | 1200 | V | VGE = 0 V, IC = 500 μA |
| Collectoremitter saturation voltage | VCEsat | 2.20 | V | VGE = 15 V, IC = 50 A, TJ = 25C |
| Collectoremitter saturation voltage | VCEsat | 2.40 | V | VGE = 15 V, IC = 50 A, TJ = 175C |
| Collectoremitter saturation voltage | VCEsat | 2.60 | V | VGE = 15 V, IC = 50 A, TJ = 175C |
| Gateemitter threshold voltage | VGE(th) | 4.5 - 6.5 | V | VGE = VCE, IC = 400 μA |
| Collectoremitter cutoff current, gate emitter shortcircuited | ICES | 0.1 | mA | VGE = 0 V, VCE = 1200 V, TJ = 25C |
| Collectoremitter cutoff current, gate emitter shortcircuited | ICES | 2.0 | mA | VGE = 0 V, VCE = 1200 V, TJ = 175C |
| Gate leakage current, collectoremitter shortcircuited | IGES | 200 | nA | VGE = 20 V , VCE = 0 V |
| Input capacitance | Cies | 7383 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | 233 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Reverse transfer capacitance | Cres | 139 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Gate charge total | Qg | 311 | nC | VCE = 600 V, IC = 50 A, VGE = 15 V |
| Gate to emitter charge | Qge | 64 | nC | VCE = 600 V, IC = 50 A, VGE = 15 V |
| Gate to collector charge | Qgc | 155 | nC | VCE = 600 V, IC = 50 A, VGE = 15 V |
| Turnon delay time | td(on) | 118 | ns | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Rise time | tr | 48 | ns | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnoff delay time | td(off) | 282 | ns | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Fall time | tf | 113 | ns | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnon switching loss | Eon | 4.40 | mJ | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnoff switching loss | Eoff | 1.40 | mJ | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Total switching loss | Ets | 5.80 | mJ | TJ = 25C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnon delay time | td(on) | 114 | ns | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Rise time | tr | 49 | ns | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnoff delay time | td(off) | 298 | ns | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Fall time | tf | 243 | ns | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnon switching loss | Eon | 5.65 | mJ | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Turnoff switching loss | Eoff | 3.26 | mJ | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Total switching loss | Ets | 8.91 | mJ | TJ = 175C, VCC = 600 V, IC = 50 A, Rg = 10 Ω, VGE = 0 V/ 15V |
| Forward voltage | VF | 2.00 | V | VGE = 0 V, IF = 50 A, TJ = 25C |
| Forward voltage | VF | 2.60 | V | VGE = 0 V, IF = 50 A, TJ = 175C |
| Forward voltage | VF | 2.55 | V | VGE = 0 V, IF = 50 A, TJ = 175C |
| Reverse recovery time | trr | 256 | ns | TJ = 25C, IF = 50 A, VR = 400 V, diF/dt = 200 A/s |
| Reverse recovery charge | Qrr | 2.7 | μC | TJ = 25C, IF = 50 A, VR = 400 V, diF/dt = 200 A/s |
| Reverse recovery current | Irrm | 19 | A | TJ = 25C, IF = 50 A, VR = 400 V, diF/dt = 200 A/s |
| Reverse recovery time | trr | 400 | ns | TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s |
| Reverse recovery charge | Qrr | 5.75 | μC | TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s |
| Reverse recovery current | Irrm | 27 | A | TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s |
2410121848_onsemi-NGTB50N120FL2WG_C462118.pdf
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