insulated gate bipolar transistor onsemi NGTB25N120FL3WG with soft fast co packaged free wheeling diode included
Key Attributes
Model Number:
NGTB25N120FL3WG
Product Custom Attributes
Td(off):
109ns
Pd - Power Dissipation:
349W
Td(on):
15ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
52pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@400uA
Gate Charge(Qg):
136nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
114ns
Switching Energy(Eoff):
700uJ
Turn-On Energy (Eon):
1mJ
Input Capacitance(Cies):
3.085nF
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
94pF
Mfr. Part #:
NGTB25N120FL3WG
Package:
TO-247
Product Description
Product Overview
This Insulated Gate Bipolar Transistor (IGBT) features an Ultra Field Stop Trench construction, offering a robust and cost-effective solution for demanding switching applications. It provides superior performance with low on-state voltage and minimal switching loss, making it well-suited for UPS and solar applications. The device includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.
Product Attributes
- Brand: Semiconductor Components Industries, LLC
- Certifications: PbFree Devices
- Package: TO-247
Technical Specifications
| Rating | Symbol | Value | Unit | Test Conditions |
| Collectoremitter voltage | VCES | 1200 | V | |
| Collector current @ TC = 25C | IC | 50 | A | |
| Collector current @ TC = 100C | IC | 25 | A | |
| Pulsed collector current, Tpulse limited by TJmax | ICM | 100 | A | |
| Diode forward current @ TC = 25C | IF | 50 | A | |
| Diode forward current @ TC = 100C | IF | 25 | A | |
| Diode pulsed current, Tpulse limited by TJmax | IFM | 100 | A | |
| Gateemitter voltage | VGE | 20 | V | |
| Transient gateemitter voltage (Tpulse = 5 s, D < 0.10) | VGE | 30 | V | |
| Power Dissipation @ TC = 25C | PD | 349 | W | |
| Power Dissipation @ TC = 100C | PD | 174 | W | |
| Operating junction temperature range | TJ | -55 to +175 | C | |
| Storage temperature range | Tstg | -55 to +175 | C | |
| Lead temperature for soldering, 1/8 from case for 5 seconds | TSLD | 260 | C | |
| Thermal resistance junctiontocase, for IGBT | R JC | 0.43 | C/W | |
| Thermal resistance junctiontocase, for Diode | R JC | 0.78 | C/W | |
| Thermal resistance junctiontoambient | R JA | 40 | C/W | |
| Collectoremitter breakdown voltage, gateemitter shortcircuited | V(BR)CES | 1200 | V | VGE = 0 V, IC = 500 A |
| Collectoremitter saturation voltage | VCEsat | 1.70 | V | VGE = 15 V, IC = 25 A |
| Collectoremitter saturation voltage @ TJ = 175C | VCEsat | 1.95 | V | VGE = 15 V, IC = 25 A |
| Gateemitter threshold voltage | VGE(th) | 4.5 - 6.5 | V | VGE = VCE, IC = 400 A |
| Collectoremitter cutoff current, gate emitter shortcircuited | ICES | 0.4 | mA | VGE = 0 V, VCE = 1200 V |
| Collectoremitter cutoff current, gate emitter shortcircuited @ TJ = 175C | ICES | 0.1 | mA | VGE = 0 V, VCE = 1200 V |
| Gate leakage current, collectoremitter shortcircuited | IGES | 200 | nA | VGE = 20 V , VCE = 0 V |
| Input capacitance | Cies | 3085 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | 94 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Reverse transfer capacitance | Cres | 52 | pF | VCE = 20 V, VGE = 0 V, f = 1 MHz |
| Gate charge total | Qg | 136 | nC | VCE = 600 V, IC = 25 A, VGE = 15 V |
| Gate to emitter charge | Qge | 29 | nC | VCE = 600 V, IC = 25 A, VGE = 15 V |
| Gate to collector charge | Qgc | 67 | nC | VCE = 600 V, IC = 25 A, VGE = 15 V |
| Turnon delay time @ TJ = 25C | td(on) | 15 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Rise time @ TJ = 25C | tr | 21 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff delay time @ TJ = 25C | td(off) | 109 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Fall time @ TJ = 25C | tf | 131 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnon switching loss @ TJ = 25C | Eon | 1.0 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff switching loss @ TJ = 25C | Eoff | 0.7 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Total switching loss @ TJ = 25C | Ets | 1.7 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnon delay time @ TJ = 150C | td(on) | 15 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Rise time @ TJ = 150C | tr | 21 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff delay time @ TJ = 150C | td(off) | 113 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Fall time @ TJ = 150C | tf | 169 | ns | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnon switching loss @ TJ = 150C | Eon | 1.45 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Turnoff switching loss @ TJ = 150C | Eoff | 0.95 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Total switching loss @ TJ = 150C | Ets | 2.4 | mJ | VCC = 600 V, IC = 25 A, Rg = 10 , VGE = 15 V |
| Forward voltage @ IF = 25 A | VF | 3.0 | V | VGE = 0 V, TJ = 25C |
| Forward voltage @ IF = 25 A, TJ = 175C | VF | 2.8 | V | VGE = 0 V |
| Reverse recovery time @ TJ = 25C | trr | 90 | ns | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery charge @ TJ = 25C | Qrr | 0.62 | C | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery current @ TJ = 25C | Irrm | 12 | A | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Diode peak rate of fall of reverse recovery current during tb | dIrrm/dt | -256 | A/ s | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery time @ TJ = 125C | trr | 114 | ns | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery charge @ TJ = 125C | Qrr | 1.17 | C | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Reverse recovery current @ TJ = 125C | Irrm | 17 | A | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
| Diode peak rate of fall of reverse recovery current during tb | dIrrm/dt | -296 | A/ s | IF = 25 A, VR = 600 V, diF/dt = 500 A/ s |
2410121934_onsemi-NGTB25N120FL3WG_C94822.pdf
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