Battery Operated System MOSFET PANJIT BSS138 50V N Channel Enhancement Mode with Low Leakage Current
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
300mA
RDS(on):
3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is a 50V N-Channel Enhancement Mode MOSFET with ESD protection, designed for battery-operated systems and solid-state relays. It features advanced Trench Process Technology for ultra-low on-resistance and very low leakage current. Applications include drivers for relays, displays, lamps, solenoids, and memories.
Product Attributes
- Brand: Panjit International Inc.
- Package: SOT-23
- Certifications: EU RoHS 2.0, IEC 61249 standard (Green molding compound)
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Pulsed Drain Current | IDM | (Note 1) | 2000 | mA | ||
| Maximum Power Dissipation | PD | TA=25C | 350 | mW | ||
| Maximum Power Dissipation | PD | TA=75C | 210 | mW | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RJA | (Note 2) | 357 | C/W | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10A | 50 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.8 | - | 1.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=2.5V, ID=100mA | - | 2.8 | 6.0 | |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=200mA | - | 1.8 | 4.0 | |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=500mA | - | 1.6 | 3.0 | |
| Zero Gate Voltage Drain Current | IDSS | VDS=50V, VGS=0V | - | - | 1 | A |
| Gate Body Leakage | IGSS | VGS=+20V, VDS=0V | - | - | +10 | A |
| Forward Transconductance | gfS | VDS=10V, ID=250mA | 100 | - | - | mS |
| Total Gate Charge | Qg | VDS=25V, ID=250mA, VGS=4.5V | - | - | 1.0 | nC |
| Turn-On Time | ton | VDD=30V, RL=100, ID=300mA, VGEN=10V, RG=6 | - | - | 40 | ns |
| Turn-Off Time | toff | - | - | 150 | ns | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | - | 50 | pF |
| Output Capacitance | Coss | - | - | 10 | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 5 | pF | |
| Diode Forward Voltage | VSD | IS=250mA, VGS=0V | - | 0.82 | 1.2 | V |
| Continuous Diode Forward Current | IS | - | - | 300 | mA | |
| Pulse Diode Forward Current | ISM | - | - | 2000 | mA |
2410121713_PANJIT-BSS138_C2844873.pdf
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