switching NIKO-SEM PV601CA N and P Channel Enhancement Mode Field Effect Transistor in SOP8 package
Key Attributes
Model Number:
PV601CA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V,6.4A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
113pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
817pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
PV601CA
Package:
SOP-8
Product Description
Product Overview
The PV601CA is an N- & P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 package. It is designed for various applications requiring efficient switching and low on-resistance. This device is Halogen-Free & Lead-Free, promoting environmental responsibility.
Product Attributes
- Brand: NIKO-SEM
- Package: SOP-8
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | N-Channel | P-Channel | Units |
| Drain-Source Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | ±20 | ±20 | V |
| Continuous Drain Current (TA = 25 °C) | 7 | -6.4 | A |
| Continuous Drain Current (TA = 70 °C) | 5.6 | -5.1 | A |
| Pulsed Drain Current (IDM) | 25 | -23 | A |
| Avalanche Current (IAS) | 12 | -19.9 | A |
| Avalanche Energy (L = 0.1mH) (EAS) | 7.2 | 19.8 | mJ |
| Power Dissipation (TA = 25 °C) | 2 | 2 | W |
| Power Dissipation (TA = 70 °C) | 1.3 | 1.3 | W |
| Junction & Storage Temperature Range (Tj, Tstg) | -55 to 150 | °C | |
| Junction-to-Ambient Thermal Resistance (Steady-State) | 77 | 85 | °C / W |
| Drain-Source Breakdown Voltage (V(BR)DSS) (VGS = 0V, ID = ±250µA) | 30 | -30 | V |
| Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = ±250µA) | 1 to 1.75 | -1 to -1.5 | V |
| Gate-Body Leakage (IGSS) (VDS = 0V, VGS = ±20V) | ±100 | ±100 | nA |
| Zero Gate Voltage Drain Current (IDSS) (VDS = ±24V, VGS = 0V, TJ = 25°C) | 1 | -1 | µA |
| Drain-Source On-State Resistance (RDS(ON)) (VGS = 4.5V, ID = 6A) | 22 | 32 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) (VGS = 10V, ID = 7A) | 16 | 22 | mΩ |
| Forward Transconductance (gfs) (VDS = 10V, ID = 7A) | 30 | 17 | S |
| Input Capacitance (Ciss) (VGS = 0V, VDS = 15V, f = 1MHz) | 300 | 817 | pF |
| Output Capacitance (Coss) (VGS = 0V, VDS = 15V, f = 1MHz) | 65 | 138 | pF |
| Reverse Transfer Capacitance (Crss) (VGS = 0V, VDS = 15V, f = 1MHz) | 43 | 113 | pF |
| Gate Resistance (Rg) (VGS = 0V, VDS = 0V, f = 1MHz) | 2.3 | 12 | Ω |
| Total Gate Charge (Qg) (VDS = 15V, VGS = 10V, ID = 7A) | 7.4 | 20 | nC |
| Gate-Source Charge (Qgs) | 0.8 | 1.7 | nC |
| Gate-Drain Charge (Qgd) | 2.1 | 5.1 | nC |
| Turn-On Delay Time (td(on)) | 15 | 20.8 | nS |
| Rise Time (tr) | 15 | 16.6 | nS |
| Turn-Off Delay Time (td(off)) | 32 | 44 | nS |
| Fall Time (tf) | 15 | 14 | nS |
| Continuous Current (Source-Drain Diode) (IS) | 1.8 | -2 | A |
| Forward Voltage (Source-Drain Diode) (VSD) (IF = 7A / -6A) | 1.1 | -1 | V |
| Reverse Recovery Time (trr) (IF = 7A / -6A, dlF/dt = 100A / µS) | 9.5 | 12.2 | nS |
| Reverse Recovery Charge (Qrr) (IF = 7A / -6A, dlF/dt = 100A / µS) | 3 | 3.5 | nC |
2411220106_NIKO-SEM-PV601CA_C384599.pdf
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