N Channel Enhancement Mode Field Effect Transistor NIKO SEM PK632BA featuring PDFN 5x6P package type
Key Attributes
Model Number:
PK632BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
78A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4mΩ@4.5V,16A
Gate Threshold Voltage (Vgs(th)):
2.35V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
229pF
Number:
1 N-channel
Output Capacitance(Coss):
393pF
Input Capacitance(Ciss):
2.096nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
PK632BA
Package:
PDFN-8(5.8x4.9)
Product Description
Product Overview
The PK632BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various power switching applications. It offers high current capability and low on-resistance, making it suitable for demanding electronic circuits.
Product Attributes
- Brand: NIKO-SEM
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | VDS | 30 | V | |
| VGS | ±20 | V | ||
| ID (TC = 25 °C) | 78 | A | ||
| ID (TC = 100 °C) | 49 | A | ||
| IDM (Pulsed) | 150 | A | ||
| Power Dissipation | PD (TC = 25 °C) | 36 | W | |
| PD (TA = 25 °C) | 2.6 | W | ||
| ELECTRICAL CHARACTERISTICS | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V |
| VGS(th) | VDS = VGS, ID = 250µA | 1.5 - 1.9 - 2.35 | V | |
| RDS(ON) (VGS = 10V, ID = 20A) | 2.1 - 3.3 | mΩ | ||
| DYNAMIC CHARACTERISTICS | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 2096 | pF |
| Coss | 393 | pF | ||
| Crss | 229 | pF | ||
| SOURCE-DRAIN DIODE RATINGS | IS (Continuous Current) | 36 | A | |
| VSD (IF = 20A, VGS = 0V) | 1 | V | ||
| trr (IF = 20A, dlF/dt = 100A / µS) | 28 | nS |
2411220318_NIKO-SEM-PK632BA_C133609.pdf
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