Gan hemts normally off device nitrides yhj 65p150amc ideal for ac dc converters and motor drive systems
Key Attributes
Model Number:
YHJ-65P150AMC
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
1pF
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
505pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
10nC
Mfr. Part #:
YHJ-65P150AMC
Package:
DFN-8(8x8)
Product Description
Product Overview
The YHJ-65P150AMC is a normally-off GaN High Electron Mobility Transistor (HEMT) device utilizing a cascode configuration. It offers high breakdown voltage, high current handling, and high operating speed, making it suitable for high-power applications. Key features include gate drive voltage compatibility (-20V to +20V), high operating frequency, and low Qrr. This device is ideal for Switch Mode Power Supplies (SMPS), AC-DC/DC-DC Converters, and Motor Drives.
Product Attributes
- Brand: Jiangxi Yuhongjin Chip Technology Co., Ltd.
- Part Number: YHJ-65P150AMC
- Package: DFN 8 x 8 mm
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-source voltage | 650 | V | |||
| V(TR)DSS | Transient drain to source voltagea | 800 | V | |||
| VGSS | Gate-source voltage | -20 | +20 | V | ||
| ID | Drain current (continuous) at TC = 25C operation | 12 | A | |||
| ID | Drain current (continuous) at TC = 100C operation | 8 | A | |||
| IDM | Pulsed drain current (pulse width: 10 s) | 21 | A | |||
| TC | Operating temperature Case | -55 | +150 | C | ||
| TJ | Junction temperature | -55 | +150 | C | ||
| TS | Storage temperature | -55 | +150 | C | ||
| TSOLD | Soldering peak temperatureb | For 10 sec., 1.6mm from the case | 260 | C | ||
| Thermal Characteristics | ||||||
| RJA | Thermal resistance junction-ambient | 54 | C/W | |||
| RJC | Thermal resistance junction-case | 2.8 | C/W | |||
| Electrical Characteristics (TCASE = 25 C unless otherwise stated) | ||||||
| V(BL)DSS | Drain-source voltage | VGS=0V | 650 | - | - | V |
| VGS(th) | Gate threshold voltage | VDS= 10V , ID=1mA | 1.7 | 2.2 | - | V |
| RDS(on) | Static drain-source on-resistance | VGS=6V, ID=5A, TJ=25 oC | - | 150 | 185 | |
| VGS=6V, ID=5A, TJ=150 oC | - | 302 | - | |||
| IDSS | Drain-source leakage current | VGS =0V, VDS =650V, TJ=25oC | - | 2.5 | 28 | A |
| VGS =0V, VDS =650V, TJ =150oC | - | 10 | - | A | ||
| IGSS | Gate-to-source forward leakage current | VGS=20V | - | - | 100 | A |
| IGSS | Gate-to-source reverse leakage current | VGS=-20V | - | - | -100 | A |
| CISS | Input capacitance | VGS=0V, VDS=400V, f=100k Hz | - | 505 | - | F |
| COSS | Output capacitance | - | 29 | - | F | |
| CRSS | Reverse transfer capacitance | - | 1 | - | F | |
| QG | Gate charge | VGS=0~10V, VDS=400V, IDS =5A | - | 10 | - | nC |
| QGS | Gate-source charge | - | 4.3 | - | nC | |
| QOSS | Output charge | VGS=0V, VDS=0~400V | - | 36 | - | nC |
| td(on) | Turn-on delay time | VDS=400V, VGS=0 to 10V, IDS=2A , RG=25 | - | 9 | - | ns |
| td(off) | Turn-off delay time | - | 20 | - | ns | |
| QRR | Reverse recovery charge | IS=5A, VDS =400V | - | 46 | - | C |
2410122016_NITRIDE-YHJ-65P150AMC_C22458936.pdf
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