insulated gate bipolar transistor onsemi NGTB15N120FL2WG designed for high speed switching in welding and UPS
Key Attributes
Model Number:
NGTB15N120FL2WG
Product Custom Attributes
Td(off):
132ns
Pd - Power Dissipation:
294W
Td(on):
64ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
50pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@400uA
Gate Charge(Qg):
109nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
370uJ
Turn-On Energy (Eon):
1.2mJ
Input Capacitance(Cies):
2.64nF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
88pF
Mfr. Part #:
NGTB15N120FL2WG
Package:
TO-247
Product Description
NGTB15N120FL2WG IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.
Features
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 s Short Circuit Capability
- PbFree Devices
Typical Applications
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
Technical Specifications
| Rating | Symbol | Value | Unit |
| ABSOLUTE MAXIMUM RATINGS | |||
| Collectoremitter voltage | VCES | 1200 | V |
| Collector current @ TC = 25C | IC | 30 | A |
| Collector current @ TC = 100C | 15 | A | |
| Pulsed collector current, Tpulse limited by TJmax | ICM | 60 | A |
| Diode forward current @ TC = 25C | IF | 30 | A |
| Diode forward current @ TC = 100C | 15 | A | |
| Diode pulsed current, Tpulse limited by TJmax | IFM | 60 | A |
| Gateemitter voltage | VGE | 20 | V |
| Transient gateemitter voltage (Tpulse = 5 s, D < 0.10) | 30 | V | |
| Power Dissipation @ TC = 25C | PD | 294 | W |
| Power Dissipation @ TC = 100C | 147 | W | |
| Short Circuit Withstand Time (VGE = 15 V, VCE = 500 V, TJ 150C) | TSC | 10 | s |
| Operating junction temperature range | TJ | 55 to +175 | C |
| Storage temperature range | Tstg | 55 to +175 | C |
| Lead temperature for soldering, 1/8 from case for 5 seconds | TSLD | 260 | C |
| THERMAL CHARACTERISTICS | |||
| Thermal resistance junctiontocase, for IGBT | R JC | 0.51 | C/W |
| Thermal resistance junctiontocase, for Diode | R JC | 0.81 | C/W |
| Thermal resistance junctiontoambient | R JA | 40 | C/W |
| ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) | |||
| Collectoremitter breakdown voltage, gateemitter shortcircuited (VGE = 0 V, IC = 500 A) | V(BR)CES | 1200 | V |
| Collectoremitter saturation voltage (VGE = 15 V, IC = 15 A) | VCEsat | 2.00 | V |
| Collectoremitter saturation voltage (VGE = 15 V, IC = 15 A, TJ = 175C) | 2.40 | V | |
| Gateemitter threshold voltage (VGE = VCE, IC = 400 A) | VGE(th) | 4.5 - 6.5 | V |
| Collectoremitter cutoff current, gate emitter shortcircuited (VGE = 0 V, VCE = 1200 V) | ICES | - 0.4 | mA |
| Collectoremitter cutoff current, gate emitter shortcircuited (VGE = 0 V, VCE = 1200 V, TJ = 175C) | - 4.0 | mA | |
| Gate leakage current, collectoremitter shortcircuited (VGE = 20 V , VCE = 0 V) | IGES | - 200 | nA |
| Input capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Cies | 2640 | pF |
| Output capacitance | Coes | 88 | pF |
| Reverse transfer capacitance | Cres | 50 | pF |
| Gate charge total (VCE = 600 V, IC = 15 A, VGE = 15 V) | Qg | 109 | nC |
| Gate to emitter charge | Qge | 23 | nC |
| Gate to collector charge | Qgc | 51 | nC |
| SWITCHING CHARACTERISTIC, INDUCTIVE LOAD (TJ = 25C, VCC = 600 V, IC = 15 A, Rg = 10 ) | |||
| Turnon delay time | td(on) | 64 | ns |
| Rise time | tr | 104 | ns |
| Turnoff delay time | td(off) | 132 | ns |
| Fall time | tf | 173 | ns |
| Turnon switching loss | Eon | 1.20 | mJ |
| Turnoff switching loss | Eoff | 0.37 | mJ |
| Total switching loss | Ets | 1.57 | mJ |
| SWITCHING CHARACTERISTIC, INDUCTIVE LOAD (TJ = 150C, VCC = 600 V, IC = 15 A, Rg = 10 ) | |||
| Turnon delay time | td(on) | 62 | ns |
| Rise time | tr | 126 | ns |
| Turnoff delay time | td(off) | 138 | ns |
| Fall time | tf | 300 | ns |
| Turnon switching loss | Eon | 1.45 | mJ |
| Turnoff switching loss | Eoff | 0.76 | mJ |
| Total switching loss | Ets | 2.21 | mJ |
| DIODE CHARACTERISTIC | |||
| Forward voltage (VGE = 0 V, IF = 15 A) | VF | 2.00 | V |
| Forward voltage (VGE = 0 V, IF = 50 A, TJ = 175C) | VF | 2.60 | V |
| DIODE REVERSE RECOVERY CHARACTERISTIC (TJ = 25C, IF = 15 A, VR = 200 V, diF/dt = 200 A/ s) | |||
| Reverse recovery time | trr | 110 | ns |
| Reverse recovery charge | Qrr | 0.69 | c |
| Reverse recovery current | Irrm | 11 | A |
2411220058_onsemi-NGTB15N120FL2WG_C411218.pdf
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