power switching IGBT onsemi AFGY160T65SPD-B4 with low saturation voltage and AEC-Q101 certification
Key Attributes
Model Number:
AFGY160T65SPD-B4
Product Custom Attributes
Td(off):
98ns
Pd - Power Dissipation:
882W
Td(on):
53ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
55pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@160mA
Gate Charge(Qg):
245nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
132ns
Switching Energy(Eoff):
5.7mJ
Turn-On Energy (Eon):
12.4mJ
Input Capacitance(Cies):
6.71nF
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
450pF
Mfr. Part #:
AFGY160T65SPD-B4
Package:
TO-247-3
Product Description
Product Overview
The AFGY160T65SPD-B4 is a Field Stop Trench IGBT designed for high-efficiency power switching applications. It features very low saturation voltage, high junction temperature capability, and excellent parallel operation performance. This device is copacked with a soft, fast recovery diode and is AEC-Q101 qualified.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified, PPAP Capable, PbFree, Halogen Free/BFR Free, RoHS Compliant
- Origin: Semiconductor Components Industries, LLC
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| IGBT Electrical Characteristics | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 1 mA | 650 | - | - | V |
| Temperature Coefficient of Breakdown Voltage | BVCES/TJ | VGE = 0 V, IC = 1 mA | - | 0.6 | - | V/C |
| Collector Cut-Off Current | ICES | VCE = VCES, VGE = 0 V | - | - | 40 | A |
| GE Leakage Current | IGES | VGE = VGES, VCE = 0 V | - | - | 250 | nA |
| GE Threshold (Bin A) | VGE(th)A | Ic = 160 mA; VCE = VGE | 5.15 | 5.5 | 6.3 | V |
| Collector to Emitter Saturation Voltage (Bin A) | VCE(sat)A | Ic = 160 A; VGE = 15 V | 1.5 | 1.6 | 1.67 | V |
| GE Threshold (Bin B) | VGE(th)B | Ic = 160 mA; VCE = VGE | 5.15 | 5.5 | 6.3 | V |
| Collector to Emitter Saturation Voltage (Bin B) | VCE(sat)B | Ic = 160 A; VGE = 15 V | 1.57 | 1.64 | 2.05 | V |
| GE Threshold (Bin C) | VGE(th)C | Ic = 160 mA; VCE = VGE | 4.3 | 5.3 | 5.65 | V |
| Collector to Emitter Saturation Voltage (Bin C) | VCE(sat)C | Ic = 160 A; VGE = 15 V | 1.5 | 1.6 | 1.67 | V |
| GE Threshold (Bin D) | VGE(th)D | Ic = 160 mA; VCE = VGE | 4.3 | 5.3 | 5.65 | V |
| Collector to Emitter Saturation Voltage (Bin D) | VCE(sat)D | Ic = 160 A; VGE = 15 V | 1.57 | 1.64 | 2.05 | V |
| GE Threshold | VGE(th) | Ic = 160 mA; VCE = VGE | 4.3 | 5.3 | 6.3 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | Ic = 160 A; VGE = 15 V | - | 1.6 | 2.05 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | Ic = 160 A; VGE = 15 V; TJ = 175C | - | 2.15 | - | V |
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 6710 | - | pF |
| Output Capacitance | Coes | - | 450 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 55 | - | pF | |
| Internal Gate Resistance | RG | f = 1 MHz | - | 3 | - | |
| IGBT Switching Characteristics (TJ = 25C) | ||||||
| Turn-On Delay Time | Td(on) | VCC = 400 V, IC = 160 A, RG = 5 , VGE = 15 V, Inductive Load | - | 53 | - | ns |
| Rise Time | Tr | - | 197 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 98 | - | ns | |
| Fall Time | Tf | - | 141 | - | ns | |
| Turn-On Switching Loss | Eon | - | 12.4 | - | mJ | |
| Turn-Off Switching Loss | Eoff | - | 5.7 | - | mJ | |
| Total Switching Loss | Ets | - | 18.1 | - | mJ | |
| IGBT Switching Characteristics (TJ = 175C) | ||||||
| Turn-On Delay Time | Td(on) | VCC = 400 V, IC = 160 A, RG = 5 , VGE = 15 V, Inductive Load | - | 52 | - | ns |
| Rise Time | Tr | - | 236 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 104 | - | ns | |
| Fall Time | Tf | - | 204 | - | ns | |
| Turn-On Switching Loss | Eon | - | 21 | - | mJ | |
| Turn-Off Switching Loss | Eoff | - | 8.5 | - | mJ | |
| Total Switching Loss | Ets | - | 29.5 | - | mJ | |
| Total Gate Charge | Qg | VCE = 400 V, IC = 160 A, VGE = 15 V | - | 163 | 245 | nC |
| Gate to Emitter Charge | Qge | - | 50 | - | nC | |
| Gate to Collector Charge | Qgc | - | 49 | - | nC | |
| Diode Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Diode Forward Voltage | VFM | IF = 160 A | - | 1.4 | 1.7 | V |
| Diode Forward Voltage | VFM | TJ = 175C | - | 1.35 | - | V |
| Reverse Recovery Energy | Erec | VCE = 400 V, IF = 160 A, IF/ t = 1000 A/ s | - | 598 | - | J |
| Reverse Recovery Energy | Erec | TJ = 175C | - | 4000 | - | J |
| Diode Reverse Recovery Time | Trr | - | 132 | - | ns | |
| Diode Reverse Recovery Time | Trr | TJ = 175C | - | 245 | - | ns |
| Diode Reverse Recovery Charge | Qrr | - | 3.3 | - | C | |
| Diode Reverse Recovery Charge | Qrr | TJ = 175C | - | 12.5 | - | C |
| Absolute Maximum Ratings | ||||||
| Collector to Emitter Voltage | VCES | - | - | 650 | V | |
| Gate to Emitter Voltage | VGES | - | - | 20 | V | |
| Transient Gate to Emitter Voltage | - | - | 30 | V | ||
| Collector Current @ TC = 25C | IC | (Note 1) | - | - | 240 | A |
| Collector Current @ TC = 100C | IC | - | - | 220 | A | |
| Nominal Current | INominal | - | - | 160 | A | |
| Pulsed Collector Current | ICM | - | - | 480 | A | |
| Diode Forward Current @ TC = 25C | IFM | (Note 1) | - | - | 240 | A |
| Diode Forward Current @ TC = 100C | IFM | - | - | 188 | A | |
| Maximum Power Dissipation @ TC = 25C | PD | - | - | 882 | W | |
| Maximum Power Dissipation @ TC = 100C | PD | - | - | 441 | W | |
| Short Circuit Withstand Time @ TC = 25C | SCWT | - | - | 6 | s | |
| Voltage Transient Ruggedness | (Note 2) | - | - | 10 | V/ns | |
| Operating Junction Temperature | TJ | -55 | - | +175 | C | |
| Storage Temperature Range | Tstg | -55 | - | +175 | C | |
| Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | TL | - | - | 300 | C | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case (IGBT) | R JC (IGBT) | - | - | 0.17 | C/W | |
| Thermal Resistance, Junction to Case (Diode) | R JC (Diode) | - | - | 0.32 | C/W | |
| Thermal Resistance, Junction to Ambient | R JA | - | - | 40 | C/W | |
2410121953_onsemi-AFGY160T65SPD-B4_C906605.pdf
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