Energy n channel enhancement mode mosfet PANJIT 2N7002K R1 00001 with low on resistance and switching
Key Attributes
Model Number:
2N7002K_R1_00001
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
4Ω@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
1 N-channel
Input Capacitance(Ciss):
35pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002K_R1_00001
Package:
SOT-23
Product Description
2N7002K N-Channel Enhancement Mode MOSFET - ESD Protected
The 2N7002K is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems. This ESD-protected device is specially designed for applications such as Solid-State Relays, Drivers (Relays, Displays, Lamps, Solenoids, Memories), and more.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU directive, IEC61249 Std. (Halogen Free)
- Material: Green molding compound
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250 A | 60 | V | ||
| Gate-Source Breakdown Voltage | BVGSS | ID = 250 A | 20 | V | ||
| Drain-Source On-Resistance | RDS(ON) | VGS = 10V, IDS = 500mA | 3 | |||
| Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, IDS = 200mA | 4 | |||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, IDS = 250 A | 1 | 1.5 | 2 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60V, VGS = 0V | 1 | A | ||
| Gate-to-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | 10 | A | ||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1MHz | 72 | 88 | pF | |
| Output Capacitance | Coss | VDS = 25V, VGS = 0V, f = 1MHz | 10 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 25V, VGS = 0V, f = 1MHz | 5 | pF | ||
| Total Gate Charge | Qg | VDS = 10V, ID = 500mA | 0.8 | nC | ||
| Gate Charge (Qgs) | Qgs | VDS = 10V, ID = 500mA | 0.4 | nC | ||
| Gate Charge (Qgd) | Qgd | VDS = 10V, ID = 500mA | 0.2 | nC | ||
| Turn-On Delay Time | td(on) | VDD = 30V, RL = 150, ID = 200mA, VGS = 10V, RG = 10 | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VDD = 30V, RL = 150, ID = 200mA, VGS = 10V, RG = 10 | 40 | ns | ||
| Continuous Drain Current | ID | TA = 25C | 300 | mA | ||
| Pulsed Drain Current | IDM | TA = 25C | 2000 | mA | ||
| Power Dissipation | PD | TA = 25C | 0.35 | W | ||
| Power Dissipation | PD | TA = 75C | 0.12 | W | ||
| Junction to Ambient Thermal Resistance | RJA | Surface mounted on FR4 board, t<10 sec | 375 | C/W | ||
| Junction to Case Thermal Resistance | RJC | 120 | C/W | |||
| Operating Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature | TSTG | -55 | 150 | C | ||
| Source-Drain Diode Forward Voltage | VSD | VGS = 0V, IS = 200mA | 1.2 | V | ||
| Source-Drain Diode Continuous Current | IS | 300 | mA | |||
| Source-Drain Diode Pulsed Current | ISM | 2000 | mA |
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Marking: K72
Approx. Weight: 0.0003 ounce, 0.0084 gram
2410122015_PANJIT-2N7002K-R1-00001_C192641.pdf
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