Integrated monolithic bias resistor network digital transistor onsemi NSVMUN5132T1G for circuit layouts
Key Attributes
Model Number:
NSVMUN5132T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
NSVMUN5132T1G
Package:
SC-70-3
Product Description
Product Overview
This series of digital transistors (BRT) integrates a single PNP transistor with a monolithic bias resistor network, consisting of a base resistor and a base-emitter resistor. Designed to replace discrete components, these devices simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring a single device and its external resistor bias network.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV Prefix), RoHS Compliant, PbFree, Halogen Free/BFR Free
- Material: Monolithic Bias Resistor Network
Technical Specifications
| Device Part | Marking | Package | CollectorBase Voltage (VCBO) | CollectorEmitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| MUN2132T1G, NSVMUN2132T1G* | 6J | SC59 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| MMUN2132LT1G, NSVMMUN2132LT1G* | A6J | SOT23 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| MUN5132T1G, NSVMUN5132T1G* | 6J | SC70/SOT323 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| DTA143EET1G | 43 | SC75 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| DTA143EM3T5G, NSVDTA143EM3T5G* | 6J | SOT723 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| NSBA143EF3T5G | A (90)* | SOT1123 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
2410010231_onsemi-NSVMUN5132T1G_C893967.pdf
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