Integrated bias resistor digital transistor onsemi NSBC114EDXV6T1G for compact and electronic applications
Key Attributes
Model Number:
NSBC114EDXV6T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
13kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
NSBC114EDXV6T1G
Package:
SOT-563
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network, eliminating the need for external resistors. The Bias Resistor Transistor (BRT) offers simplified circuit design, reduced board space, and a lower component count, making it ideal for various electronic applications. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix)
- Material: Pb-Free, Halogen Free/BFR Free
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) - Continuous | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 (Input Resistor) | R1/R2 Ratio |
|---|---|---|---|---|---|---|---|---|
| MUN5211DW1 | SOT-363 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 7.0 - 13 kΩ (Typ 10 kΩ) | 0.8 - 1.2 (Typ 1.0) |
| NSBC114EDXV6 | SOT-563 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 7.0 - 13 kΩ (Typ 10 kΩ) | 0.8 - 1.2 (Typ 1.0) |
| NSBC114EDP6 | SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 7.0 - 13 kΩ (Typ 10 kΩ) | 0.8 - 1.2 (Typ 1.0) |
Electrical Characteristics (TA = 25C)
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | (VCB = 50 V, IE = 0) |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | (VCE = 50 V, IB = 0) |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc | (VEB = 6.0 V, IC = 0) |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | (IC = 10 µA, IE = 0) |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | (Note 6) (IC = 2.0 mA, IB = 0) |
| DC Current Gain | hFE | 35 | 60 | - | - | (Note 6) (IC = 5.0 mA, VCE = 10 V) |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | (Note 6) (IC = 10 mA, IB = 0.3 mA) |
| Input Voltage (Off) | Vi(off) | - | 1.2 | - | Vdc | (VCE = 5.0 V, IC = 100 µA) |
| Input Voltage (On) | Vi(on) | - | 2.0 | - | Vdc | (VCE = 0.2 V, IC = 10 mA) |
| Output Voltage (On) | VOL | - | - | 0.2 | Vdc | (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) |
| Output Voltage (Off) | VOH | 4.9 | - | - | Vdc | (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) |
Thermal Characteristics
| Characteristic | Package | Condition | Symbol | Max | Unit |
|---|---|---|---|---|---|
| Total Device Dissipation | SOT-363 | ONE JUNCTION HEATED (TA = 25C) | PD | 187 | mW |
| BOTH JUNCTION HEATED (TA = 25C) | PD | 250 | mW | ||
| SOT-563 | ONE JUNCTION HEATED (TA = 25C) | PD | 357 | mW | |
| BOTH JUNCTION HEATED (TA = 25C) | PD | 500 | mW | ||
| Total Device Dissipation | SOT-963 | ONE JUNCTION HEATED (TA = 25C) | PD | 231 | mW |
| BOTH JUNCTION HEATED (TA = 25C) | PD | 339 | mW | ||
| Thermal Resistance, Junction to Ambient | SOT-363 | ONE JUNCTION HEATED (Note 1, 2) | R√JA | 670 | °C/W |
| BOTH JUNCTION HEATED (Note 1, 2) | R√JA | 493 | °C/W | ||
| Thermal Resistance, Junction to Ambient | SOT-563 | ONE JUNCTION HEATED (Note 1) | R√JA | 350 | °C/W |
| BOTH JUNCTION HEATED (Note 3) | R√JA | 250 | °C/W | ||
| Thermal Resistance, Junction to Ambient | SOT-963 | ONE JUNCTION HEATED (Note 4, 5) | R√JA | 540 | °C/W |
| BOTH JUNCTION HEATED (Note 3, 4, 5) | R√JA | 369 | °C/W | ||
| Junction and Storage Temperature Range | All Packages | TJ, Tstg | -55 to +150 | °C | |
2409301103_onsemi-NSBC114EDXV6T1G_C604327.pdf
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