SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration
Key Attributes
Model Number:
UF4SC120023B7S
Product Custom Attributes
Mfr. Part #:
UF4SC120023B7S
Package:
TO-263-7
Product Description
Product Overview
The UF4SC120023B7S is a 1200 V, 23 m SiC FET featuring a cascode configuration of a normally-on SiC JFET and a Si MOSFET, resulting in a normally-off SiC FET. Its standard gate-drive characteristics allow for direct replacement of Si IGBTs, Si superjunction devices, or SiC MOSFETs with minimal redesign. Available in a space-saving TO-263-7 package, it offers ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
- Package: TO-263-7
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-source Voltage | VDS | 1200 | V | |||
| Gate-source Voltage | VGS | DC | -20 | +20 | V | |
| Gate-source Voltage | VGS | AC (f > 1 Hz) | -25 | +25 | V | |
| Continuous Drain Current (Note 1) | ID | TC = 25 C | 70 | A | ||
| Continuous Drain Current (Note 1) | ID | TC = 100 C | 51 | A | ||
| Pulsed Drain Current (Note 2) | IDM | TC = 25 C | 204 | A | ||
| Single Pulsed Avalanche Energy (Note 3) | EAS | L = 15 mH, IAS = 4.1 A | 126 | mJ | ||
| SiC FET dv/dt Ruggedness | dv/dt | VDS 800 V | 150 | V/ns | ||
| Power Dissipation | Ptot | TC = 25 C | 385 | W | ||
| Maximum Junction Temperature | TJ, max | 175 | C | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | C | ||
| Reflow Soldering Temperature | Tsolder | Reflow MSL 1 | 245 | C | ||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | R JC | 0.3 | 0.39 | C/W | ||
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) | ||||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 25 C | 2 | 60 | A | |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 175C | 20 | A | ||
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 C, VGS = -20 V / +20 V | -6 | 20 | nA | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 25C | 23 | 30 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 125C | 42 | m | ||
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 175C | 62 | m | ||
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 | 4.8 | 6 | V |
| Gate Resistance | RG | f = 1 MHz, open drain | 4.5 | |||
| REVERSE DIODE | ||||||
| Diode Continuous Forward Current (Note 1) | IS | TC = 25 C | 70 | A | ||
| Diode Pulse Current (Note 2) | IS, pulse | TC = 25 C | 204 | A | ||
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 25 C | 1.2 | 1.35 | V | |
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 175 C | 1.65 | V | ||
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 25 C | 243 | nC | ||
| Reverse Recovery Time | trr | VDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 25 C | 26.8 | ns | ||
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 150 C | 264 | nC | ||
| Reverse Recovery Time | trr | VDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 150 C | 28.8 | ns | ||
| DYNAMIC | ||||||
| Input Capacitance | Ciss | VDS = 800 V, VGS = 0 V, f = 100 kHz | 1430 | pF | ||
| Output Capacitance | Coss | 85 | pF | |||
| Reverse Transfer Capacitance | Crss | 2 | pF | |||
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 800 V, VGS = 0 V | 108 | pF | ||
| Effective Output Capacitance, Time Related | Coss(tr) | 200 | pF | |||
| COSS Stored Energy | Eoss | VDS = 800 V, VGS = 0 V | 35 | J | ||
| Total Gate Charge | QG | VDS = 800 V, ID = 40 A, VGS = 0 V to 15 V | 37.8 | nC | ||
| Gate-drain Charge | QGD | 8 | ||||
| Gate-source Charge | QGS | 11.8 | ||||
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 40 A, Gate Driver = -5 V to +15 V, RG_ON = 10 , RG_OFF = 20 , Inductive Load, FWD: Same Device with VGS = -5 V and RG = 20 , Device Snubber: RS = 10 , CS = 100 pF TJ = 25 C (Note 4), (Note 5) | 23 | ns | ||
| Rise Time | tr | 25 | ns | |||
| Turn-off Delay Time | td(off) | 64 | ns | |||
| Fall Time | tf | 10 | ns | |||
| Turn-on Energy Including RS Energy | EON | 719 | J | |||
| Turn-off Energy Including RS Energy | EOFF | 95 | J | |||
| Total Switching Energy | ETOTAL | 814 | J | |||
| Snubber RS Energy During Turn-on | ERS_ON | 8 | J | |||
| Snubber RS Energy During Turn-off | ERS_OFF | 15 | J | |||
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 40 A, Gate Driver = -5 V to +15 V, RG_ON = 10 , RG_OFF = 20 , Inductive Load, FWD: Same Device with VGS = -5 V and RG = 20 , Device Snubber: RS = 10 , CS = 100 pF TJ = 150 C (Note 4), (Note 5) | 21 | ns | ||
| Rise Time | tr | 27 | ns | |||
| Turn-off Delay Time | td(off) | 63 | ns | |||
| Fall Time | tf | 10 | ns | |||
| Turn-on Energy Including RS Energy | EON | 781 | J | |||
| Turn-off Energy Including RS Energy | EOFF | 111 | J | |||
| Total Switching Energy | ETOTAL | 892 | J | |||
| Snubber RS Energy During Turn-on | ERS_ON | 11 | J | |||
| Snubber RS Energy During Turn-off | ERS_OFF | 15 | J | |||
2512301019_onsemi-UF4SC120023B7S_C44870454.pdf
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