P channel JFET onsemi MMBFJ176 designed for low level analog switching and sample hold circuits in SOT 23 package
Key Attributes
Model Number:
MMBFJ176
Product Custom Attributes
Ciss-Input Capacitance:
-
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
225mW
Drain Current (Idss):
2mA@15V
FET Type:
-
RDS(on):
250Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
1V@10nA
Mfr. Part #:
MMBFJ176
Package:
SOT-23
Product Description
Product Overview
The J175/J176/MMBFJ175/MMBFJ176/MMBFJ177 series are P-Channel JFETs designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. Sourced from process 88.
Product Attributes
- Brand: onsemi
- Trademarks: onsemi
- Intellectual Property: Patents, trademarks, copyrights, trade secrets
- Origin: Semiconductor Components Industries, LLC dba onsemi
Technical Specifications
| Part Number | Package | Drain-Gate Voltage (VDG) | Gate-Source Voltage (VGS) | Forward Gate Current (IGF) | Operating and Storage Junction Temperature Range (TJ, TSTG) | Total Device Dissipation (PD) (mW) | Drain-Source On Resistance (rDS(on)) () | Gate-Source Cut-Off Voltage (VGS(off)) (V) |
| J175 | TO-92 | -30 | 30 | 50 mA | -55 to +150 C | 350 | 125 | 3.0 - 6.0 |
| J176 | TO-92 | -30 | 30 | 50 mA | -55 to +150 C | 350 | 250 | 1.0 - 4.0 |
| MMBFJ175 | SOT-23 | -30 | 30 | 50 mA | -55 to +150 C | 225 | 125 | 3.0 - 6.0 |
| MMBFJ176 | SOT-23 | -30 | 30 | 50 mA | -55 to +150 C | 225 | 250 | 1.0 - 4.0 |
| MMBFJ177 | SOT-23 | -30 | 30 | 50 mA | -55 to +150 C | 225 | 300 | 0.8 - 2.5 |
2410121929_onsemi-MMBFJ176_C232759.pdf
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