N Channel RF Amplifier onsemi MMBF5484 Compact SOT 23 Package Low On Resistance for Analog Switching
Key Attributes
Model Number:
MMBF5484
Product Custom Attributes
Ciss-Input Capacitance:
-
Pd - Power Dissipation:
-
Drain Current (Idss):
-
FET Type:
-
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
-
Gate-Source Cutoff Voltage (VGS(off)):
-
Mfr. Part #:
MMBF5484
Package:
SOT-23
Product Description
N-Channel RF Amplifier MMBF5484, MMBF5485, MMBF5486
This N-Channel RF Amplifier is designed primarily for electronic switching applications, offering low On Resistance for analog switching. Sourced from Process 50, these devices are suitable for various RF applications.
Product Attributes
- Brand: onsemi
- Package: SOT-23
- Material: Pb-Free (indicated on ordering information)
Technical Specifications
| Parameter | Test Condition | MMBF5484 | MMBF5485 | MMBF5486 | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Gate Voltage (VDG) | 25 | V | |||
| Gate-Source Voltage (VGS) | -25 | V | |||
| Forward Gate Current (IGF) | 10 | mA | |||
| Operating and Storage Junction Temperature Range (TJ, Tstg) | -55 to +150 | C | |||
| Thermal Characteristics | |||||
| Total Device Dissipation (PD) | (TA = 25C) | 225 | mW | ||
| Derate above 25C | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient (RJA) | (Device mounted on FR-4 PCB 1.6 x 1.6 x 0.06) | 556 | C/W | ||
| Electrical Characteristics | |||||
| Gate-Source Breakdown Voltage (V(BR)GSS) | IG = -1.0 A, VDS = 0 | -25 | -25 | -25 | V |
| Gate Reverse Current (IGSS) | VGS = -20 V, VDS = 0 | -1.0 | -1.0 | -1.0 | nA |
| Gate Reverse Current (IGSS) | VGS = -20 V, VDS = 0, TA = 100C | -0.2 | -0.2 | -0.2 | µA |
| Gate-Source Cutoff Voltage (VGS(off)) | VDS = 15 V, ID = 10 nA | -0.3 to -3.0 | -0.5 to -4.0 | -2.0 to -6.0 | V |
| Zero-Gate Voltage Drain Current (IDSS) | VDS = 15 V, VGS = 0 | 1.0 to 5.0 | 4.0 to 10 | 8.0 to 20 | mA |
| Forward Transfer Conductance (gfs) | VDS = 15 V, VGS = 0, f = 1.0 kHz | 3000 to 6000 | 3500 to 7000 | 4000 to 8000 | mhos |
| Input Conductance (Re(yis)) | VDS = 15 V, VGS = 0, f = 100 MHz | 100 | mhos | ||
| Input Conductance (Re(yis)) | VDS = 15 V, VGS = 0, f = 400 kHz | 1000 | 1000 | mhos | |
| Output Conductance (gos) | VDS = 15 V, VGS = 0, f = 1.0 kHz | 50 | 60 | 75 | mhos |
| Output Conductance (Re(yos)) | VDS = 15 V, VGS = 0, f = 100 MHz | 75 | mhos | ||
| Output Conductance (Re(yos)) | VDS = 15 V, VGS = 0, f = 400 MHz | 100 | 100 | mhos | |
| Forward Transconductance (Re(yfs)) | VDS = 15 V, VGS = 0, f = 100 MHz | 2500 | mhos | ||
| Forward Transconductance (Re(yfs)) | VDS = 15 V, VGS = 0, f = 400 MHz | 3000 | 3500 | mhos | |
| Input Capacitance (Ciss) | VDS = 15 V, VGS = 0, f = 1.0 MHz | 5.0 | 5.0 | 5.0 | pF |
| Reverse Transfer Capacitance (Crss) | VDS = 15 V, VGS = 0, f = 1.0 MHz | 1.0 | 1.0 | 1.0 | pF |
| Output Capacitance (Coss) | VDS = 15 V, VGS = 0, f = 1.0 MHz | 2.0 | 2.0 | 2.0 | pF |
| Noise Figure (NF) | VDS = 15 V, RG = 1.0 kΩ, f = 100 MHz | 3.0 | dB | ||
| Noise Figure (NF) | VDS = 15 V, RG = 1.0 kΩ, f = 400 MHz | 4.0 | dB | ||
| Noise Figure (NF) | VDS = 15 V, RG = 1.0 kΩ, f = 100 MHz | 2.0 | 2.0 | dB | |
| Noise Figure (NF) | VDS = 15 V, RG = 1.0 kΩ, f = 400 MHz | 4.0 | 4.0 | dB | |
2504301750_onsemi-MMBF5484_C274687.pdf
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