Motion SPM 8 Module onsemi FNB81060T3 Featuring EMI Minimization and Integrated Gate Drive for IGBTs
Key Attributes
Model Number:
FNB81060T3
Product Custom Attributes
Mfr. Part #:
FNB81060T3
Package:
SPM-25-FAA
Product Description
Product Overview
The FNB81060T3 is a Motion SPM 8 module designed for AC Induction, BLDC, and PMSM motors. It offers a high-performance inverter output stage with integrated gate drive for IGBTs, minimizing EMI and losses. The module includes multiple protection features such as under-voltage lockouts, inter-lock function, over-current shutdown, thermal monitoring, and fault reporting. Its high-speed HVIC requires a single supply voltage and translates logic-level inputs to high-voltage drive signals for robust, short-circuit-rated IGBTs. Separate negative IGBT terminals support various control algorithms.
Product Attributes
- Brand: ON Semiconductor
- Certifications: UL Certified No. E209204 (UL1557)
- Package: SPMFA-A25
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| INVERTER PART | |||||
| Supply Voltage (VPN) | Applied between P NU, NV, NW | 450 | V | ||
| Supply Voltage (Surge, VPN(Surge)) | Applied between P NU, NV, NW | 500 | V | ||
| Collector Emitter Voltage (VCES) | 600 | V | |||
| Collector Current (IC) | Each IGBT, TC = 25C, TJ 150C | 10 | A | ||
| Collector Current (Peak, ICP) | Each IGBT, TC = 25C, TJ 150C, Under 1 ms Pulse Width | 20 | A | ||
| Operating Junction Temperature (TJ) | -40 | 150 | C | ||
| Collector Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 8 A | 1.50 | 2.10 | V | |
| Collector Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 8 A, TJ = 150C | 1.80 | - | V | |
| FWDi Forward Voltage (VF) | VIN = 0 V, IF = 8 A | 1.90 | 2.50 | V | |
| FWDi Forward Voltage (VF) | VIN = 0 V, IF = 8 A, TJ = 150C | 1.80 | - | V | |
| Switching Times (tON) | VPN = 400 V, VDD = VBS = 15 V, IC = 10 A, TJ = 25C, Inductive load | 0.25 | 0.75 | s | |
| Switching Times (tC(ON)) | VPN = 400 V, VDD = VBS = 15 V, IC = 10 A, TJ = 25C, Inductive load | 0.15 | 0.45 | s | |
| Switching Times (tOFF) | VPN = 400 V, VDD = VBS = 15 V, IC = 10 A, TJ = 25C, Inductive load | 0.50 | 1.00 | s | |
| Switching Times (tC(OFF)) | VPN = 400 V, VDD = VBS = 15 V, IC = 10 A, TJ = 25C, Inductive load | 0.10 | 0.40 | s | |
| Switching Times (trr) | VPN = 400 V, VDD = VBS = 15 V, IC = 10 A, TJ = 25C, Inductive load | 0.10 | - | s | |
| Collector Emitter Leakage Current (ICES) | VCE = VCES | - | 1.00 | mA | |
| CONTROL PART | |||||
| Control Supply Voltage (VDD) | Applied between VDD COM | 20 | V | ||
| HighSide Control Bias Voltage (VBS) | Applied between VBU VSU, VBV VSV, VBW VSW | 20 | V | ||
| Input Signal Voltage (VIN) | Applied between INUH, INVH, INWH, INUL, INVL, INWL COM | -0.3 | VDD + 0.3 | V | |
| Function Supply Voltage (/FO, /SDW, VTS) | Applied between /FO, /SDW, VTS COM | -0.3 | VDD + 0.3 | V | |
| Fault Current Sink Current (/FO, /SDW, VTS) | at /FO, /SDW, VTS pin | 2 | mA | ||
| Current Sensing Input Voltage (VSC) | Applied between CSC COM | -0.3 | VDD + 0.3 | V | |
| Quiescent VDD Supply Current (IQDD) | VDD = 15 V, IN(UH,VH,WH,UL,VL,WL) = 0 V | - | 1.7 | mA | |
| Operating VDD Supply Current (IPDD) | VDD = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input | - | 2.2 | mA | |
| Quiescent VBS Supply Current (IQBS) | VBS = 15 V, IN(UH, VH, WH) = 0 V | - | 100 | A | |
| TOTAL SYSTEM | |||||
| Self Protection Supply Voltage Limit (VPN(PROT)) | VDD = VBS = 13.5 ~ 16.5 V, TJ = 150C, NonRepetitive, < 2 s | 400 | V | ||
| Module Case Operation Temperature (TC) | -40 | 125 | C | ||
| Storage Temperature (TSTG) | -40 | 125 | C | ||
| Isolation Voltage (VISO) | Connect Pins to Heat Sink Plate, AC 60 Hz, Sinusoidal, AC 1 Minute | 1600 | Vrms | ||
| JunctiontoCase Thermal Resistance (Rth(jc)Q) | Inverter IGBT part, (Per Module) | - | - | 3.40 | C/W |
| JunctiontoCase Thermal Resistance (Rth(jc)F) | Inverter FWDi part, (Per Module) | - | - | 3.86 | C/W |
2411261451_onsemi-FNB81060T3_C897892.pdf
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