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quality Adjustable over current protection levels on onsemi NFAQ0860L33T intelligent power module for motor control factory
quality Adjustable over current protection levels on onsemi NFAQ0860L33T intelligent power module for motor control factory

Adjustable over current protection levels on onsemi NFAQ0860L33T intelligent power module for motor control

Key Attributes
Model Number: NFAQ0860L33T
Product Custom Attributes
Mfr. Part #:
NFAQ0860L33T
Package:
DIP-38
Product Description

Product Overview

The NFAQ0860L33T is a fully-integrated Intelligent Power Module (IPM) featuring a 600 V, 8 A rating. It comprises a high-voltage driver, six IGBTs, and a thermistor, designed for driving permanent magnet synchronous motors (PMSM), brushless-DC (BLDC) motors, and AC asynchronous motors. The module's 3-phase bridge configuration with separate emitter connections for lower legs offers flexibility in control algorithm implementation. Integrated protection functions include cross-conduction protection, external shutdown, and under-voltage lockout. An internal comparator and reference allow for adjustable over-current protection levels.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: UL1557 Certification (File Number: E339285)

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VPN P NU, NV, NW 0 280 450 V
High-Side Control Bias Voltage VBS VB(U) VS(U), VB(V) VS(V), VB(W) VS(W) 13.0 15 17.5 V
Control Supply Voltage VDD VDD VSS 14.0 15 16.5 V
ON-state Input Voltage VIN(ON) HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS 3.0 - 5.0 V
OFF-state Input Voltage VIN(OFF) 0 - 0.3 V
PWM Frequency fPWM 1 - 20 kHz
CollectorEmitter Leakage Current ICES VCE = 600 V - - 100 A
CollectorEmitter Saturation Voltage VCE(sat) IN = 5 V, IC = 8 A, Tj = 25 C - 2.4 3.0 V
CollectorEmitter Saturation Voltage VCE(sat) IN = 5 V, IC = 4 A, Tj = 100 C - 1.9 - V
Forward Voltage VF IN = 0 V, IC = 8 A, Tj = 25 C - 2.1 2.7 V
Forward Voltage VF IN = 0 V, IC = 4 A, Tj = 100 C - 1.6 - V
Junction to Case Thermal Resistance (IGBT Part) Rth(jc)Q Per 1/6 Module - - 3.9 C/W
Junction to Case Thermal Resistance (FRD Part) Rth(jc)F Per 1/6 Module - - 7.3 C/W
Turn-on Switching Time tON IC = 8 A, VPN = 300 V, Tj = 25 C - 0.4 1.1 s
Turn-off Switching Time tOFF IC = 8 A, VPN = 300 V, Tj = 25 C - 0.4 1.1 s
Turn-on Switching Loss EON IC = 8 A, VPN = 300 V, Tj = 25 C - 190 - J
Turn-off Switching Loss EOFF IC = 8 A, VPN = 300 V, Tj = 25 C - 90 - J
Total Switching Loss ETOT IC = 8 A, VPN = 300 V, Tj = 25 C - 280 - J
Diode Reverse Recovery Energy EREC IC = 4 A, VPN = 300 V, Tj = 100 C - 25 - J
Diode Reverse Recovery Time tRR - 140 - ns
Quiescent VBS Supply Current IQBS VBS = 15 V, HIN = 0 V, per driver - 0.07 0.4 mA
Quiescent VDD Supply Current IQDD VDD = 15 V, LIN = 0 V, VDDVSS - 0.95 3.0 mA
ON Threshold Voltage VIN(ON) HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS - - 2.5 V
OFF Threshold Voltage VIN(OFF) 0.8 - - V
FAULT Terminal Sink Current IoSD FAULT: ON / VFAULT = 0.1 V - 2 - mA
Fault-Output Pulse Width tFOD 1.1 1.65 2.2 ms
Shut Down Threshold (High) VSD+ SDVSS - - 2.5 V
Shut Down Threshold (Low) VSD SDVSS 0.8 - - V
ITRIP Trip Level VITRIP ITRIPVSS 0.44 0.49 0.54 V
ITRIP to Shutdown Propagation Delay tITRIP - 1.1 - s
ITRIP Blanking Time tITRIPBL 250 350 - ns
High-Side Control Bias Voltage UnderVoltage Protection Reset Level UVBSR 10.3 11.1 11.9 V
High-Side Control Bias Voltage UnderVoltage Protection Detection Level UVBSD 10.1 10.9 11.7 V
High-Side Control Bias Voltage UnderVoltage Protection Hysteresis UVBSH - 0.2 - V
Supply Voltage UnderVoltage Protection Reset Level UVDDR 10.3 11.1 11.7 V
Supply Voltage UnderVoltage Protection Detection Level UVDDD 10.1 10.9 11.5 V
Supply Voltage UnderVoltage Protection Hysteresis UVDDH - 0.2 - V

2411272159_onsemi-NFAQ0860L33T_C898097.pdf

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