Schottky Barrier Diode onsemi BAS70LT1G Miniature Package Low Forward Voltage for Switching Circuits
Key Attributes
Model Number:
BAS70LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100nA
Reverse Leakage Current (Ir):
10uA@70V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70LT1G
Package:
SOT-23
Product Description
Product Overview
These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Their extremely low forward voltage reduces conduction loss, and the miniature surface mount package is ideal for space-limited, hand-held, and portable applications.
Product Attributes
- Brand: onsemi
- Certifications: AECQ101 Qualified, PPAP Capable, PbFree, Halogen Free/BFR Free, RoHS Compliant
- Material: Not specified
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
| Forward Current | IF | 70 | mA | |
| Non-Repetitive Peak Forward Surge Current (t 1.0 s) | IFSM | 100 | mA | |
| Reverse Voltage | VR | 70 | V | |
| Forward Power Dissipation @ TA = 25C | PF | 225 | mW | |
| Derate above 25C | 1.8 | mW/C | ||
| Thermal Resistance JunctiontoAmbient | R JA | 508 (min pad) / 311 (1.0 x 1.0 in pad) | C/W | Note 1, Note 2 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | |
| Reverse Breakdown Voltage (IR = 10 A) | V(BR)R | 70 | V | |
| Total Capacitance (VR = 0 V, f = 1.0 MHz) | CT | 2.0 | pF | |
| Reverse Leakage (VR = 50 V) | IR | 0.1 | A | |
| Reverse Leakage (VR = 70 V) | IR | 10 | A | |
| Forward Voltage (IF = 1.0 mA) | VF | 410 | mV | |
| Forward Voltage (IF = 10 mA) | VF | 750 | mV | |
| Forward Voltage (IF = 15 mA) | VF | 1000 | mV |
2410010333_onsemi-BAS70LT1G_C232585.pdf
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