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quality sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices factory
quality sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices factory

sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices

Key Attributes
Model Number: C106D1G
Product Custom Attributes
Holding Current (Ih):
190uA
Current - Gate Trigger(Igt):
15uA
Voltage - On State(Vtm):
2.2V
Average Gate Power Dissipation (PG(AV)):
-
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
400V
Current - Surge(Itsm@f):
20A@60Hz
Operating Temperature:
-40℃~+110℃
Mfr. Part #:
C106D1G
Package:
TO-225-3
Product Description

Product Overview

The C106 Series Sensitive Gate Silicon Controlled Rectifiers are glassivated PNPN devices designed for high-volume consumer applications. They are suitable for temperature, light, and speed control, process and remote control, and warning systems where reliable operation is crucial. Key features include glassivated surface for reliability, economical pricing, practical triggering and holding characteristics, and a flat, rugged Thermopad construction for low thermal resistance and high heat dissipation. These devices are PbFree and offer sensitive gate triggering.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: PbFree Devices

Technical Specifications

CharacteristicSymbolC106BC106D, C106D1*C106M, C106M1*UnitNotes
Peak Repetitive OffState VoltageVDRM, VRRM200400600VSine Wave, 5060 Hz, RGK = 1 k, TC = 40 to 110C
OnState RMS CurrentIT(RMS)4.0A180 Conduction Angles, TC = 80C
Average OnState CurrentIT(AV)2.55A180 Conduction Angles, TC = 80C
Peak NonRepetitive Surge CurrentITSM20A1/2 Cycle, Sine Wave, 60 Hz, TJ = +25C
Circuit Fusing ConsiderationsI2t1.65Ast = 8.3 ms
Forward Peak Gate PowerPGM0.5WPulse Width 1.0 s, TC = 80C
Forward Average Gate PowerPG(AV)0.1WPulse Width 1.0 s, TC = 80C
Forward Peak Gate CurrentIGM0.2APulse Width 1.0 s, TC = 80C
Operating Junction Temperature RangeTJ40 to +110C
Storage Temperature RangeTstg40 to +150C
Mounting Torque6.0in. lb.Note 2
Thermal Resistance, JunctiontoCaseRJC3.0C/W
Thermal Resistance, JunctiontoAmbientRJA75C/W
Maximum Lead Temperature for Soldering PurposesTL260C1/8 in. from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking CurrentIDRM, IRRM10 / 100A / mATJ = 25C / 110C, VAK = Rated VDRM or VRRM, RGK = 1 k
Peak Forward OnState VoltageVTM2.2VITM = 4 A, Note 3
Gate Trigger Current (Continuous dc)IGT15 / 20035 / 500ATJ = 25C / 40C, VAK = 6 Vdc, RL = 100 , Note 4
Peak Reverse Gate VoltageVGRM6.0VIGR = 10 A
Gate Trigger Voltage (Continuous dc)VGT0.4 / 0.60 / 0.80.5 / 0.75 / 1.0VTJ = 25C / 40C, VAK = 6 Vdc, RL = 100 , Note 4
Gate NonTrigger VoltageVGD0.2VVAK = 12 V, RL = 100 , TJ = 110C, Note 4
Latching CurrentIL0.20 / 5.00.35 / 7.0mATJ = 25C / 40C, VAK = 12 V, IG = 20 mA, RGK = 1 k, Note 4
Holding CurrentIH0.19 / 3.00.33 / 6.00.07 / 2.0mATJ = 25C / 40C / +110C, VD = 12 Vdc, RGK = 1 k, Note 4
Critical RateofRise of OffState Voltagedv/dt8.0V/sVAK = Rated VDRM, Exponential Waveform, RGK = 1 k, TJ = 110C

2410122031_onsemi-C106D1G_C184428.pdf

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