Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS08R03GNF with Low RDS ON and Fast Switching

Name: Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS08R03GNF with Low RDS ON and Fast Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SFS08R03GNF
Availability: InStock

Key Attributes

Model Number: SFS08R03GNF

Product Custom Attributes

Drain To Source Voltage:

80V

Current - Continuous Drain(Id):

130A

RDS(on):

3.3mΩ@10V,50A

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

95.2pF

Number:

1 N-channel

Input Capacitance(Ciss):

5.661nF

Pd - Power Dissipation:

132W

Gate Charge(Qg):

71.5nC@10V

Mfr. Part #:

SFS08R03GNF

Package:

PDFN5x6-8

Product Description

Product Overview

The SFS08R03GNF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on proprietary device design for superior performance. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The high Vth series is specifically optimized for high-voltage systems requiring gate driving voltages greater than 10V. This MOSFET is ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC-DC converters, solar inverters, and UPS and energy inverters.

Product Attributes

Brand: Oriental Semiconductor
Product Line: SFGMOS
Channel Type: N-Channel
Mode: Enhancement Mode
Package Type: PDFN5*6
Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Drain-source voltage (min @ Tj(max))	VDS, min	80	V	@ Tj(max)
Pulse drain current	ID, pulse	390	A	TC=25 C
Drain-source on-state resistance (max @ VGS=10V)	RDS(ON), max	3.3	m	VGS=10V
Total gate charge	Qg	71.5	nC	VGS=10V, VDS=40V, ID=50A
Drain source voltage	VDS	80	V	Tj=25C unless otherwise noted
Gate source voltage	VGS	20	V	Tj=25C unless otherwise noted
Continuous drain current (TC=25 C)	ID	130	A	TC=25 C
Continuous diode forward current (TC=25 C)	IS	130	A	TC=25 C
Power dissipation (TC=25 C)	PD	132	W	TC=25 C
Single pulsed avalanche energy (5)	EAS	194	mJ	VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 C
Operation and storage temperature	Tstg, Tj	-55 to 150	C
Thermal resistance, junction-case	RJC	0.95	C/W
Thermal resistance, junction-ambient (4)	RJA	62	C/W	Measured on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C
Drain-source breakdown voltage	BVDSS	80	V	VGS=0 V, ID=250 A
Gate threshold voltage	VGS(th)	2.0 - 4.0	V	VDS=VGS, ID=250 A
Drain-source on-state resistance	RDS(ON)	3.0 - 3.3	m	VGS=10 V, ID=50 A
Gate-source leakage current	IGSS	100	nA	VGS=20 V
Gate-source leakage current	IGSS	-100	VGS=-20 V
Drain-source leakage current	IDSS	1	A	VDS=80 V, VGS=0 V
Gate resistance	RG	2.6		=1 MHz, Open drain
Input capacitance	Ciss	5661	pF	VGS=0 V, VDS=25 V, =100 kHz
Output capacitance	Coss	1631	pF	VGS=0 V, VDS=25 V, =100 kHz
Reverse transfer capacitance	Crss	95.2	pF	VGS=0 V, VDS=25 V, =100 kHz
Turn-on delay time	td(on)	28	ns	VGS=10 V, VDS=40 V, RG=2 , ID=50 A
Rise time	tr	10	ns	VGS=10 V, VDS=40 V, RG=2 , ID=50 A
Turn-off delay time	td(off)	60.2	ns	VGS=10 V, VDS=40 V, RG=2 , ID=50 A
Fall time	tf	14	ns	VGS=10 V, VDS=40 V, RG=2 , ID=50 A
Total gate charge	Qg	71.5	nC	VGS=10 V, VDS=40 V, ID=50 A
Gate-source charge	Qgs	21	nC	VGS=10 V, VDS=40 V, ID=50 A
Gate-drain charge	Qgd	10	nC	VGS=10 V, VDS=40 V, ID=50 A
Gate plateau voltage	Vplateau	4.4	V	VGS=10 V, VDS=40 V, ID=50 A
Diode forward voltage	VSD	1.3	V	IS=12 A, VGS=0 V
Reverse recovery time	trr	67.2	ns	VR=50 V, IS=50 A, di/dt=100 A/s
Reverse recovery charge	Qrr	87.9	nC	VR=50 V, IS=50 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	2.2	A	VR=50 V, IS=50 A, di/dt=100 A/s

Package Information

PDFN5*6-C Package Outline Dimensions

Symbol	mm Min	mm Nom	mm Max
A	1.00	1.10	1.20
b	0.30	0.40	0.50
c	0.154	0.254	0.354
D1	5.00	5.20	5.40
D2	3.80	4.10	4.25
e	1.17	1.27	1.37
E1	5.95	6.15	6.35
E2	5.66	5.86	6.06
E4	3.52	3.72	3.92
H	0.40	0.50	0.60
L	0.30	0.60	0.70
L1	0.12	REF
K	1.15	1.30	1.45

PDFN5*6-M Package Outline Dimensions

Symbol	mm Min	mm Nom	mm Max
A	0.90	1.00	1.10
A1	0.00	-	0.05
b	0.33	0.41	0.51
C	0.20	0.25	0.30
D1	4.80	4.90	5.00
D2	3.61	3.81	3.96
E	5.90	6.00	6.10
E1	5.70	5.75	5.80
E2	3.38	3.58	3.78
e	1.27	BSC
H	0.41	0.51	0.61
K	1.10	-	-
L	0.51	0.61	0.71
L1	0.06	0.13	0.20
	0	-	12

Ordering Information

Package Type	Units/ Reel	Reels / Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
PDFN5*6-C	5000	2	10000	5	50000
PDFN5*6-M	5000	2	10000	5	50000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
SFS08R03GNF	PDFN5*6	yes	yes	yes

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). Oriental Semiconductor Co.,Ltd. All Rights Reserved

2410121608_ORIENTAL-SEMI-SFS08R03GNF_C5118908.pdf

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