Low gate charge power MOSFET ORIENTAL SEMI SFS06R025GF designed for synchronous rectification systems
Key Attributes
Model Number:
SFS06R025GF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
180A
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
99pF
Pd - Power Dissipation:
140W
Input Capacitance(Ciss):
4.46nF
Output Capacitance(Coss):
1.56nF
Gate Charge(Qg):
81nC@10V
Mfr. Part #:
SFS06R025GF
Package:
PDFN-8(5x6)
Product Description
Product Overview
The SFS06R025GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage, offering low Vth. It is suitable for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Package Type: PDFN56
- Certifications: Pb Free, RoHS, Halogen Free
- Marking: SFS06R025G
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| General Parameters | |||||
| Drain source voltage | VDS | 60 | V | ||
| Pulsed drain current | ID, pulse | 720 | A | ||
| RDS(ON) max | RDS(ON) | 2.5 | m | VGS=10V | |
| Gate charge | Qg | 81 | nC | ||
| Power dissipation | PD | 140 | W | ||
| Absolute Maximum Ratings | |||||
| Drain source voltage | VDS | 60 | V | Tj=25C unless otherwise noted | |
| Gate source voltage | VGS | 20 | V | Tj=25C unless otherwise noted | |
| Continuous drain current | ID | 180 | A | TC=25C 1) | |
| Pulsed drain current | ID, pulse | 720 | A | TC=25C 2) | |
| Continuous diode forward current | IS | 180 | A | TC=25C 1) | |
| Diode pulsed current | IS, Pulse | 720 | A | TC=25C 2) | |
| Power dissipation | PD | 140 | W | TC=25C 3) | |
| Single pulsed avalanche energy | EAS | 135 | mJ | 5) | |
| Operation and storage temperature | TstgTj | -55 to 150 | C | ||
| Thermal Characteristics | |||||
| Thermal resistance, junction-case | RJC | 0.89 | C/W | ||
| Thermal resistance, junction-ambient | RJA | 62 | C/W | 4) | |
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0 V, ID=250 A | |
| Gate threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250 A | |
| Drain-source on-state resistance | RDS(ON) | 2.0 - 2.5 | m | VGS=10 V, ID=50 A | |
| Drain-source on-state resistance | RDS(ON) | 2.6 - 3.5 | m | VGS=4.5 V, ID=30 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | |
| Drain-source leakage current | IDSS | 1 | A | VDS=60 V, VGS=0 V | |
| Gate resistance | RG | 2 | =1 MHz, Open drain | ||
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 4460 | pF | VGS=0 V, VDS=25 V, =100 kHz | |
| Output capacitance | Coss | 1560 | pF | VGS=0 V, VDS=25 V, =100 kHz | |
| Reverse transfer capacitance | Crss | 99 | pF | VGS=0 V, VDS=25 V, =100 kHz | |
| Turn-on delay time | td(on) | 13 | ns | VGS=10 V, VDS=30 V, RG=2 , ID=60 A | |
| Rise time | tr | 9.5 | ns | VGS=10 V, VDS=30 V, RG=2 , ID=60 A | |
| Turn-off delay time | td(off) | 51 | ns | VGS=10 V, VDS=30 V, RG=2 , ID=60 A | |
| Fall time | tf | 14 | ns | VGS=10 V, VDS=30 V, RG=2 , ID=60 A | |
| Gate Charge Characteristics | |||||
| Total gate charge | Qg | 81 | nC | VGS=10 V, VDS=30 V, ID=60 A | |
| Gate-source charge | Qgs | 11 | nC | VGS=10 V, VDS=30 V, ID=60 A | |
| Gate-drain charge | Qgd | 16 | nC | VGS=10 V, VDS=30 V, ID=60 A | |
| Gate plateau voltage | Vplateau | 2.8 | V | VGS=10 V, VDS=30 V, ID=60 A | |
| Body Diode Characteristics | |||||
| Diode forward voltage | VSD | 1.3 | V | IS=50 A, VGS=0 V | |
| Reverse recovery time | trr | 51 | ns | VR=30 V, IS=60 A, di/dt=100 A/s | |
| Reverse recovery charge | Qrr | 43 | nC | VR=30 V, IS=60 A, di/dt=100 A/s | |
| Peak reverse recovery current | Irrm | 1.4 | A | VR=30 V, IS=60 A, di/dt=100 A/s | |
| Package & Pin Information | |||||
| Package Name | PDFN56-P | ||||
| Package Outline Dimensions (mm) | Symbol | Min | Nom | Max | |
| A | 1.00 | 1.10 | 1.20 | ||
| b | 0.30 | 0.40 | 0.50 | ||
| c | 0.154 | 0.254 | 0.354 | ||
| D1 | 5.00 | 5.20 | 5.40 | ||
| D2 | 3.80 | 4.10 | 4.25 | ||
| e | 1.17 | 1.27 | 1.37 | ||
| E1 | 5.95 | 6.15 | 6.35 | ||
| E2 | 5.66 | 5.86 | 6.06 | ||
| E4 | 3.52 | 3.72 | 3.92 | ||
| H | 0.40 | 0.50 | 0.60 | ||
| L | 0.30 | 0.60 | 0.70 | ||
| L1 | 0.12 | REF | |||
| K | 1.15 | 1.30 | 1.45 | ||
| Ordering Information | |||||
| Package Type | Units/ Reel | Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| PDFN56-P | 2500 | 2 | 5000 | 5 | 25000 |
2508181758_ORIENTAL-SEMI-SFS06R025GF_C49005839.pdf
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