Enhancement Mode N Channel MOSFET ORIENTAL SEMI SFS06R03GF with Excellent Avalanche Characteristics
Key Attributes
Model Number:
SFS06R03GF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160A
RDS(on):
3mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
77.7pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.377nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
66.1nC@10V
Mfr. Part #:
SFS06R03GF
Package:
PDFN(5x6)
Product Description
Product Overview
The SFS06R03GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification power systems requiring low driving voltage. It is ideal for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Product Series: Low Vth Series
- Material: Semiconductor
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| General Parameters | ||||
| Drain source voltage (min @ Tj(max)) | VDS, min | 60 | V | |
| Pulse drain current | ID, pulse | 480 | A | |
| RDS(ON) max @ VGS=10V | RDS(ON) | 3 | m | |
| Total gate charge | Qg | 66.1 | nC | |
| Product Name | SFS06R03GF | |||
| Package Marking | SFS06R03G | |||
| Package Type | PDFN5*6 | |||
| Absolute Maximum Ratings | ||||
| Drain source voltage | VDS | 60 | V | Tj=25C unless otherwise noted |
| Gate source voltage | VGS | 20 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 160 | A | Note 1 |
| Pulsed drain current (TC=25 C) | ID, pulse | 480 | A | Note 2 |
| Continuous diode forward current (TC=25 C) | IS | 160 | A | Note 1 |
| Diode pulsed current (TC=25 C) | IS, Pulse | 480 | A | Note 2 |
| Power dissipation (TC=25 C) | PD | 140 | W | Note 3 |
| Single pulsed avalanche energy | EAS | 200 | mJ | Note 5 |
| Operation and storage temperature | TstgTj | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction-case | RJC | 0.89 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Note 4 |
| Electrical Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 1.3 (Typ.) 2.5 (Max.) | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 2.3 (Typ.) 3.0 (Max.) | m | VGS=10 V, ID=20 A |
| Drain-source on-state resistance | RDS(ON) | 3.5 (Typ.) 4.0 (Max.) | m | VGS=4.5 V, ID=10 A |
| Gate-source leakage current | IGSS | 100 (Max.) | nA | VGS=20 V; -100 (Max.) nA VGS=-20 V |
| Drain-source leakage current | IDSS | 1 (Max.) | A | VDS=60 V, VGS=0 V |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 5377 (Typ.) | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Output capacitance | Coss | 1666 (Typ.) | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Reverse transfer capacitance | Crss | 77.7 (Typ.) | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Turn-on delay time | td(on) | 22.5 (Typ.) | ns | VGS=10 V, VDS=30 V, RG=2 , ID=25 A |
| Rise time | tr | 6.7 (Typ.) | ns | VGS=10 V, VDS=30 V, RG=2 , ID=25 A |
| Turn-off delay time | td(off) | 80.3 (Typ.) | ns | VGS=10 V, VDS=30 V, RG=2 , ID=25 A |
| Fall time | tf | 26.8 (Typ.) | ns | VGS=10 V, VDS=30 V, RG=2 , ID=25 A |
| Gate Charge Characteristics | ||||
| Total gate charge | Qg | 66.1 (Typ.) | nC | VGS=10 V, VDS=30 V, ID=25 A |
| Gate-source charge | Qgs | 10.7 (Typ.) | nC | VGS=10 V, VDS=30 V, ID=25 A |
| Gate-drain charge | Qgd | 10.9 (Typ.) | nC | VGS=10 V, VDS=30 V, ID=25 A |
| Gate plateau voltage | Vplateau | 2.9 (Typ.) | V | VGS=10 V, VDS=30 V, ID=25 A |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | 1.3 (Typ.) | V | IS=20 A, VGS=0 V |
| Reverse recovery time | trr | 68.3 (Typ.) | ns | VR=30 V, IS=25 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 73.0 (Typ.) | nC | VR=30 V, IS=25 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 1.9 (Typ.) | A | VR=30 V, IS=25 A, di/dt=100 A/s |
| Package Dimensions (PDFN5*6-P) | ||||
| Dimension A | A | 1.00 - 1.20 | mm | Min - Max |
| Dimension b | b | 0.30 - 0.50 | mm | Min - Max |
| Dimension c | c | 0.154 - 0.354 | mm | Min - Max |
| Dimension D1 | D1 | 5.00 - 5.40 | mm | Min - Max |
| Dimension D2 | D2 | 3.80 - 4.25 | mm | Min - Max |
| Dimension e | e | 1.17 - 1.37 | mm | Min - Max |
| Dimension E1 | E1 | 5.95 - 6.35 | mm | Min - Max |
| Dimension E2 | E2 | 5.66 - 6.06 | mm | Min - Max |
| Dimension E4 | E4 | 3.52 - 3.92 | mm | Min - Max |
| Dimension H | H | 0.40 - 0.60 | mm | Min - Max |
| Dimension L | L | 0.30 - 0.70 | mm | Min - Max |
| Dimension L1 | L1 | 0.12 (REF) | mm | |
| Dimension K | K | 1.15 - 1.45 | mm | Min - Max |
| Package Dimensions (PDFN5*6-K) | ||||
| Dimension A | A | 0.8 - 1.0 | mm | Min - Max |
| Dimension A1 | A1 | 0 - 0.05 | mm | Min - Max |
| Dimension b | b | 0.35 - 0.49 | mm | Min - Max |
| Dimension c | c | 0.254 (REF) | mm | |
| Dimension D | D | 4.9 - 5.1 | mm | Min - Max |
| Dimension F | F | 1.40 (REF) | mm | |
| Dimension E | E | 5.7 - 5.9 | mm | Min - Max |
| Dimension e | e | 1.27 (BSC) | mm | |
| Dimension H | H | 5.95 - 6.20 | mm | Min - Max |
| Dimension L1 | L1 | 0.10 - 0.18 | mm | Min - Max |
| Dimension G | G | 0.60 (REF) | mm | |
| Dimension K | K | 4.00 (REF) | mm | |
| Ordering Information | ||||
| Package Type | PDFN5*6-P | Units/Reel | 2500 | |
| Reels / Inner Box | 2 | Units/ Inner Box | 5000 | |
| Inner Boxes/ Carton Box | 5 | Units/ Carton Box | 25000 | |
| Package Type | PDFN5*6-K | Units/Reel | 2500 | |
| Reels / Inner Box | 2 | Units/ Inner Box | 5000 | |
| Inner Boxes/ Carton Box | 5 | Units/ Carton Box | 25000 | |
2411220116_ORIENTAL-SEMI-SFS06R03GF_C5175398.pdf
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