Surface Mount Schottky Diode onsemi MBR120LSFT1G Ideal for Low Voltage High Frequency Rectification
Key Attributes
Model Number:
MBR120LSFT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
400uA@20V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
20V
Diode Configuration:
-
Voltage - Forward(Vf@If):
650mV@3A
Current - Rectified:
1A
Mfr. Part #:
MBR120LSFT1G
Package:
SOD-123FL
Product Description
Product Overview
The MBR120LSF and NRVB120LSF are surface mount Schottky power rectifiers utilizing a large area metal-to-silicon power diode. They are ideally suited for low voltage, high frequency rectification, or as free-wheeling and polarity protection diodes in compact, weight-critical surface mount applications. These devices offer an easy-to-use alternative to leadless packages and are ideal for portable and battery-powered products such as cellular phones, chargers, notebook computers, and PDAs. Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'O-ring' of multiple supply voltages.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Package Type: SOD123FL
- Certifications: AECQ101 Qualified (NRVB prefix), PPAP Capable (NRVB prefix), RoHS Compliant, PbFree, Halogen Free/BFR Free
- Material: Epoxy, Molded
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Model | Peak Repetitive Reverse Voltage (VRRM) | DC Blocking Voltage (VR) | Average Rectified Forward Current (IO) @ TL = 115C | Peak Repetitive Forward Current (IFRM) @ TL = 110C | Non-Repetitive Peak Surge Current (IFSM) @ 60 Hz | Storage Temperature (Tstg) | Operating Junction Temperature (TJ) | Maximum Instantaneous Forward Voltage (VF) @ IF = 1.0 A | Maximum Instantaneous Reverse Current (IR) @ VR = 20 V |
| MBR120LSF, NRVB120LSF | 20 V | 20 V | 1.0 A | 2.0 A | 50 A | 55 to 150 C | 55 to 125 C | 0.45 V (TJ=25C) | 0.40 mA (TJ=25C) |
2410010231_onsemi-MBR120LSFT1G_C891416.pdf
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