Dual P Channel MOSFET PJSEMI PJM04DP30DFA with 30V Drain Source Voltage and 4.1A Continuous Current
Key Attributes
Model Number:
PJM04DP30DFA
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
2 P-Channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
650pF
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
PJM04DP30DFA
Package:
DFN2x2A-6L
Product Description
Product Overview
The PJM04DP30DFA is a Dual P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(ON), making it suitable for applications such as PWM, load switching in portable devices, and general power management. With a VDS of -30V and ID of -4.1A, it offers a maximum RDS(on) of 60m at VGS=-10V.
Product Attributes
- Brand: Pingjing Semiconductor
- Product Code: PJM04DP30DFA
- Package Type: DFN2x2A-6L
- Revision: 1.0
- Date: May-2022
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 4.1 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 104 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | V | ||
| Zero Gate Voltage Drain Current | -IDSS | VDS=-24V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250A | 1 | 1.4 | 3 | V |
| Drain-source on-resistance | RDS(on) | Note3,VGS=-10V, ID=-4.1A | 48 | 60 | m | |
| Drain-source on-resistance | RDS(on) | Note3,VGS=-4.5V, ID=-3A | 60 | 87 | m | |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-4A | 5.5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | 650 | pF | ||
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | 105 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | 65 | pF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V,RL=3.6,VGS=-10V,RCEN=3 | 8.5 | nS | ||
| Turn-on Rise Time | tr | VDD=-15V,RL=3.6,VGS=-10V,RCEN=3 | 4.5 | nS | ||
| Turn-off Delay Time | td(off) | VDD=-15V,RL=3.6,VGS=-10V,RCEN=3 | 26 | nS | ||
| Turn-off Fall Time | tf | VDD=-15V,RL=3.6,VGS=-10V,RCEN=3 | 12.5 | nS | ||
| Total Gate Charge | Qg | VDS=-15V,ID=-4.1A,VGS=-10V | 12.5 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V,ID=-4.1A,VGS=-10V | 2.8 | nC | ||
| Gate-Drain Charge | Qg | VDS=-15V,ID=-4.1A,VGS=-10V | 2.7 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-4.1A | 1.2 | V | ||
| Diode Forward Current | -IS | Note2 | 4.1 | A | ||
2409302203_PJSEMI-PJM04DP30DFA_C22470330.pdf
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