dual channel battery protection featuring orisilicon OSM002 for fast charging and discharging control

Product Overview

This is a dual-channel product designed for secondary protection of lithium batteries, utilizing advanced technology. It achieves extremely low source-to-source on-resistance at a specific gate-source voltage, effectively addressing charging and discharging issues in fast-charging mobile phone batteries. The source-to-source turn-off voltage offers a maximum typical withstand voltage of , enhancing the reliability of battery protection systems. It features a compact package with a wide body terminal, improving soldering and heat dissipation characteristics.

Product Attributes

• Brand: Not specified
• Origin: Not specified
• Material: Not specified
• Color: Not specified
• Certifications: Not specified

Technical Specifications

Absolute Maximum Ratings

Note: Exceeding the absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Absolute maximum ratings are applicable for single use only, not for combined use. Junction temperature exceeding the limits will damage the chip. Monitoring ambient temperature does not guarantee that the rated temperature limits will not be exceeded. In applications with high power dissipation and poor thermal resistance, the maximum ambient temperature may have to be lowered. In applications with moderate power dissipation and low thermal resistance, the maximum ambient temperature may exceed the maximum limit as long as the junction temperature is within the rated limit.

The junction temperature (Tj) depends on the ambient temperature (Ta), device power dissipation (Pd), and the package's junction-to-ambient thermal resistance (RJA). The maximum junction temperature is calculated by the following formula:

Tj(max) = Ta + Pd * RJA

The junction-to-ambient thermal resistance of the package is based on modeling and calculation methods using a layer PCB. It primarily depends on the application and board layout. Special attention to thermal board design is required in applications with high power dissipation. The value of RJA may vary with material, layout, and environmental conditions. The rated value of RJA is based on a layer circuit board. For detailed information on board structure, refer to [Reference 1] and [Reference 2].

Rth(j-mb) is the junction-to-board thermal characteristic parameter, in C/W. The package's Rth(j-mb) is based on modeling and calculation methods using a layer PCB.

According to the report and the "Guide to Electronic Package Thermal Information," thermal characteristic parameters and thermal resistance are not the same. Rth(j-mb) measures device power flowing along multiple thermal paths, while Rth(j-a) only involves one path. Therefore, Rth(j-mb) includes convection from the top of the package and radiation from the package, factors that make Rth(j-mb) more useful in real applications. The maximum junction temperature is calculated by the following formula:

Tj(max) = Tb + Pd * Rth(j-mb)

For detailed information on Rth(j-mb), refer to [Reference 1] and [Reference 2].

[Reference 1] and [Reference 2] are for worst-case conditions, i.e., the device is soldered onto the PCB for surface-mount packaging.

Marking Information

1. PIN1 = PIN1

2. OSM002 = Device Name

3. Y = Year

4. M = Month

5. LLL = Trace No

Version History