20V N Channel MOSFET OSEN 2302 offering fast switching speed and ruggedness for electronic lamp ballasts
Key Attributes
Model Number:
2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
320pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.1nC@4.5V
Mfr. Part #:
2302
Package:
SOT-23
Product Description
Product Overview
This 20V N-Channel MOSFET offers fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. It is ideal for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Model: 2302
- Package: SOT-23
- Publication Order Number: [2302]
- Revision: 21.2.10
Technical Specifications
| Parameters | Symbol | Ratings | Unit | Conditions |
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage-Continuous | VGS | ±12 | V | |
| Drain Current-Continuous (Note 2) | ID | 3 | A | |
| Drain Current-Single Pulsed (Note 1) | IDM | 12 | A | |
| Power Dissipation (Note 2) | PD | 1.25 | W | |
| Max.Operating junction temperature | Tj | 150 | °C | |
| Drain-Source Breakdown Voltage Current (Note 1) | BVDSS | 20 | V | ID=250µA, VGS=0V, TJ=25°C |
| Gate Threshold Voltage | VGS(th) | 0.5 / 0.7 / 1.1 | V | VDS=VGS, ID=250µA |
| Drain-Source On-Resistance | RDS(on) | 45 / 55 | mΩ | VGS=4.5V, ID=1A |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±12V, VDS=0 |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0 |
| Forward Transconductance | gfs | 10 | S | VDS=5V, ID=3A |
| Turn-On Delay Time (Note 2) | Td(on) | 11 | ns | VDS=10V, ID=3A, RG=4.7Ω,VGS=4.5V |
| Rise Time | Tr | 35 | ns | |
| Turn-Off Delay Time | Td(off) | 32 | ns | |
| Fall Time | Tf | 10 | ns | |
| Total Gate Charge | Qg | 5.1 | nC | VDS=10V, VGS=4.5V, ID=3A (Note 2) |
| Gate-Source Charge | Qgs | 0.5 | nC | |
| Gate-Drain Charge | Qgd | 1.5 | nC | |
| Input Capacitance | Ciss | 320 | pF | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance | Coss | 95 | - | |
| Reverse Transfer Capacitance | Crss | 35 | pF | |
| Continuous Drain-Source Diode Forward Current (Note 2) | IS | 3 | A | |
| Diode Forward On-Voltage | VSD | 1.2 | V | IS=1A, VGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | 100 | °C/W |
2410121731_OSEN-2302_C20607738.pdf
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