rugged n channel mosfet osen irf840 designed for high voltage power factor correction and lamp ballast
Key Attributes
Model Number:
IRF840
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-
RDS(on):
680mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
1.505nF
Pd - Power Dissipation:
135W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
IRF840
Package:
TO-220
Product Description
Product Overview
The IRF840 is a 500V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy with improved dv/dt capability. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China
- Model Number: IRF840
- Publication Order Number: [IRF840]
- Revision: 21.2.10
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 500 | V | |
| VGS | Gate-Source Voltage-Continuous | 30 | V | |
| ID | Drain Current-Continuous (Note 2) | 9 | A | |
| IDM | Drain Current-Single Plused (Note 1) | 36 | A | |
| PD | Power Dissipation (Note 2) | 135 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | 500 | V | ID=250AVGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- 0.68 -- | VGS=10VID=4.5A | |
| IGSS | Gate-Body Leakage Current | -- 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- 1 | A | VDS=500VVGS=0 |
| Td(on) | Turn-On Delay Time | -- 13.6 37.2 | ns | VDS=250VID=9ARG=25Note 2 |
| Tr | Rise Time | -- 9.1 28.2 | ns | |
| Td(off) | Turn-Off Delay Time | -- 42 94 | ns | |
| Tf | Fall Time | -- 10 30 | ns | |
| Qg | Total Gate Charge | -- 43 56 | nC | VDS=400V,VGS=10V ID=9ANote 2 |
| Qgs | Gate-Source Charge | -- 7.5 -- | nC | |
| Qgd | Gate-Drain Charge | -- 18.5 -- | nC | |
| Ciss | Input Capacitance | -- 1130 1505 | pF | VDS=25VVGS=0 f=1MHz |
| Coss | Output Capacitance | -- 45 60 | pF | |
| Crss | Reverse Transfer Capacitance | -- 20 35 | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- 9 | A | |
| VSD | Diode Forward On-Voltage | -- 1.4 | V | IS=9AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- 0.93 | /W |
2410121731_OSEN-IRF840_C20607747.pdf
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