Low Saturation Voltage Ultra Fast IGBT onsemi SGH40N60UFDTU Ideal for Motor Control and Servo Systems
Key Attributes
Model Number:
SGH40N60UFDTU
Product Custom Attributes
Pd - Power Dissipation:
160W
Td(off):
65ns
Td(on):
15ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
50pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.5V@20mA
Gate Charge(Qg):
97nC@15V
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
42ns
Switching Energy(Eoff):
200uJ
Turn-On Energy (Eon):
160uJ
Input Capacitance(Cies):
1.43nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
170pF
Mfr. Part #:
SGH40N60UFDTU
Package:
TO-3P-3
Product Description
SGH40N60UFD Ultra-Fast IGBT
The Fairchild SGH40N60UFD is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high-speed switching. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, and servo controls. Key features include a low saturation voltage of 2.1V at 20A, high input impedance, and an integrated fast recovery diode (FRD) with a typical reverse recovery time (trr) of 42ns.
Product Attributes
- Brand: Fairchild Semiconductor
- Product Series: UFD
- Package Type: TO-3P
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VCES | Collector-Emitter Voltage | 600 | V | ||
| VGES | Gate-Emitter Voltage | 20 | V | ||
| IC | Collector Current @ TC = 25C | 40 | A | ||
| IC | Collector Current @ TC = 100C | 20 | A | ||
| ICM | Pulsed Collector Current (1) | 160 | A | ||
| IF | Diode Continuous Forward Current @ TC = 100C | 15 | A | ||
| IFM | Diode Maximum Forward Current | 160 | A | ||
| PD | Maximum Power Dissipation @ TC = 25C | 160 | W | ||
| PD | Maximum Power Dissipation @ TC = 100C | 64 | W | ||
| TJ | Operating Junction Temperature | -55 | 150 | C | |
| Tstg | Storage Temperature Range | -55 | 150 | C | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds | 300 | C | ||
| Thermal Characteristics | |||||
| RJC(IGBT) | Thermal Resistance, Junction-to-Case | -- | 0.77 | C/W | |
| RJC(DIODE) | Thermal Resistance, Junction-to-Case | -- | 1.7 | C/W | |
| RJA | Thermal Resistance, Junction-to-Ambient | -- | 40 | C/W | |
| Electrical Characteristics (IGBT) | |||||
| BVCES | Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250uA) | 600 | -- | -- | V |
| BVCES/TJ | Temperature Coefficient of Breakdown Voltage (VGE = 0V, IC = 1mA) | 0.6 | -- | V/C | |
| ICES | Collector Cut-Off Current (VCE = VCES, VGE = 0V) | -- | 250 | uA | |
| IGES | G-E Leakage Current (VGE = VGES, VCE = 0V) | -- | 100 | nA | |
| VGE(th) | G-E Threshold Voltage (IC = 20mA, VCE = VGE) | 3.5 | 4.5 | 6.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage (IC = 20A, VGE = 15V) | 2.1 | 2.6 | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage (IC = 40A, VGE = 15V) | 2.6 | -- | V | |
| Cies | Input Capacitance (VCE = 30V, VGE = 0V, f = 1MHz) | 1430 | -- | pF | |
| Coes | Output Capacitance | 170 | -- | pF | |
| Cres | Reverse Transfer Capacitance | 50 | -- | pF | |
| td(on) | Turn-On Delay Time (VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C) | 15 | -- | ns | |
| tr | Rise Time | 30 | -- | ns | |
| td(off) | Turn-Off Delay Time | 65 | 130 | ns | |
| tf | Fall Time | 50 | 150 | ns | |
| Eon | Turn-On Switching Loss | 160 | -- | uJ | |
| Eoff | Turn-Off Switching Loss | 200 | -- | uJ | |
| Ets | Total Switching Loss | 360 | 600 | uJ | |
| td(on) | Turn-On Delay Time (VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C) | 30 | -- | ns | |
| tr | Rise Time | 37 | -- | ns | |
| td(off) | Turn-Off Delay Time | 110 | 200 | ns | |
| tf | Fall Time | 144 | 250 | ns | |
| Eon | Turn-On Switching Loss | 310 | -- | uJ | |
| Eoff | Turn-Off Switching Loss | 430 | -- | uJ | |
| Ets | Total Switching Loss | 740 | 1200 | uJ | |
| Qg | Total Gate Charge (VCE = 300 V, IC = 20A, VGE = 15V) | 97 | 150 | nC | |
| Qge | Gate-Emitter Charge | 20 | 30 | nC | |
| Qgc | Gate-Collector Charge | 25 | 40 | nC | |
| Le | Internal Emitter Inductance (Measured 5mm from PKG) | 14 | -- | nH | |
| Electrical Characteristics (DIODE) | |||||
| VFM | Diode Forward Voltage (IF = 15A, TC = 25C) | 1.4 | 1.7 | V | |
| VFM | Diode Forward Voltage (IF = 15A, TC = 100C) | 1.3 | -- | V | |
| trr | Diode Reverse Recovery Time (IF = 15A, di/dt = 200A/us, TC = 25C) | 42 | 60 | ns | |
| trr | Diode Reverse Recovery Time (IF = 15A, di/dt = 200A/us, TC = 100C) | 74 | -- | ns | |
| Irr | Diode Peak Reverse Recovery Current (TC = 25C) | 4.5 | 6.0 | A | |
| Irr | Diode Peak Reverse Recovery Current (TC = 100C) | 6.5 | -- | A | |
| Qrr | Diode Reverse Recovery Charge (TC = 25C) | 80 | 180 | nC | |
| Qrr | Diode Reverse Recovery Charge (TC = 100C) | 220 | -- | nC | |
2410121738_onsemi-SGH40N60UFDTU_C2716.pdf
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